公开(公告)号：US11590536B2

公开(公告)日：2023-02-28

申请号：US16274477

申请日：2019-02-13

Applicant: SONICMEMS (ZHENGZHOU) TECHNOLOGY CO., LTD. ,  PEKING UNIVERSITY SHENZHEN GRADUATE SCHOOL

Inventor： Yu-Feng Jin ,  Sheng-Lin Ma ,  Qian-Cheng Zhao ,  Yi-Hsiang Chiu ,  Huan Liu ,  Hung-Ping Lee ,  Dan Gong

IPC: B06B3/00 ,  B06B1/06 ,  H01L41/083 ,  H01L41/08 ,  H01L41/277 ,  H01L41/332 ,  H01L41/337 ,  H01L41/338 ,  G06K9/00 ,  G06V40/13

Abstract: A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

公开(公告)号：US20230053303A1

公开(公告)日：2023-02-16

申请号：US17791620

申请日：2020-12-18

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Shoji AKIYAMA

IPC: H01L41/187 ,  H01L41/337 ,  H01L41/312 ,  H01L41/27

Abstract: A manufacturing method of a composite substrate capable of suppressing damage due to heat treatment after bonding, and a composite substrate manufactured by the method are provided. The manufacturing method of a composite substrate according to the present invention is a manufacturing method of a composite substrate in which a piezoelectric wafer, which is a lithium tantalate wafer or lithium niobate wafer, and a support wafer are bonded together. This manufacturing method is characterized by a step of bonding a piezoelectric wafer and a support wafer, and a step of performing heat treatment of the wafer bonded in the step of bonding, with the non-bonded surface of the piezoelectric wafer being a mirror surface.

公开(公告)号：US11245377B2

公开(公告)日：2022-02-08

申请号：US16073063

申请日：2017-01-06

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Shoji Akiyama ,  Masayuki Tanno

IPC: H03H3/08 ,  H03H9/02 ,  H01L41/187 ,  H01L41/312 ,  H03H3/02 ,  H03H9/25 ,  H01L21/86 ,  H01L41/337

Abstract: A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.

公开(公告)号：US11165408B2

公开(公告)日：2021-11-02

申请号：US16042097

申请日：2018-07-23

Applicant: DISCO CORPORATION

Inventor： Jun Abatake ,  Kenya Kai ,  Kentaro Shiraga ,  Keiji Nomaru

IPC: H03H3/02 ,  H03H3/08 ,  H01L41/337 ,  H03H9/02 ,  B23K26/00 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/361 ,  B23K26/03 ,  H01L41/313 ,  H01L41/335 ,  B23K26/57 ,  G01B11/06 ,  B24B7/22

Abstract: A method of manufacturing a substrate for an acoustic wave device includes: a substrate joining step of joining a piezoelectric material layer to a surface on one side of a support substrate; a grinding step of grinding the piezoelectric material layer; a removal amount map forming step of measuring in-plane thickness of the piezoelectric material layer by an optical thickness meter, and calculating a removal amount for the piezoelectric material layer for adjusting thickness variability of the piezoelectric material layer to or below a threshold on the basis of each coordinate in the plane, to form a removal amount map; a laser processing step of applying a pulsed laser beam of such a wavelength as to be absorbed in the piezoelectric material layer, to selectively remove the piezoelectric material layer, based on the removal amount map; and a polishing step of polishing the surface of the piezoelectric material layer.

公开(公告)号：US11082026B2

公开(公告)日：2021-08-03

申请号：US17097129

申请日：2020-11-13

Applicant: NGK INSULATORS, LTD.

Inventor： Yuji Hori ,  Tatsuro Takagaki

IPC: H03H9/02 ,  H01L41/312 ,  H03H9/25 ,  H01L41/337 ,  H01L41/187 ,  C30B33/06 ,  C23C14/10 ,  C23C14/08 ,  C30B29/30 ,  H01L41/313

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

公开(公告)号：US20210234525A1

公开(公告)日：2021-07-29

申请号：US17230729

申请日：2021-04-14

Applicant: Akoustis, Inc.

Inventor： Dae Ho KIM ,  Frank Zhiquang BI ,  Mary WINTERS ,  Abhay Saranswarup KOCHHAR ,  Emad MEHDIZADEH ,  Rohan W. HOULDEN ,  Jeffrey B. SHEALY

IPC: H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US20210075389A1

公开(公告)日：2021-03-11

申请号：US17041367

申请日：2019-03-26

Applicant: Soitec

Inventor： Djamel Belhachemi ,  Thierry Barge

IPC: H03H3/10 ,  H01L41/313 ,  H01L41/332 ,  H01L41/337 ,  H01L41/33 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  C09J7/30

Abstract: A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: —providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, —depositing a dielectric layer on the rough surface of the piezoelectric substrate, —providing a carrier substrate, —depositing a photo-polymerizable adhesive layer on the carrier substrate, —bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, —irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

公开(公告)号：US20210067123A1

公开(公告)日：2021-03-04

申请号：US16990638

申请日：2020-08-11

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy ,  Mary Winters ,  Craig Moe

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H9/10 ,  H03H9/05 ,  H01L41/337 ,  H01L41/317 ,  H01L41/29 ,  H01L41/23 ,  H01L41/18 ,  H01L41/08 ,  H01L41/053 ,  H01L41/047 ,  H03H9/54

Abstract: An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

公开(公告)号：US10826456B2

公开(公告)日：2020-11-03

申请号：US15689889

申请日：2017-08-29

Applicant: DISCO CORPORATION

Inventor： Kazuma Sekiya

IPC: H03H3/02 ,  H01L41/338 ,  H03H9/02 ,  H01L41/22 ,  H03H3/08 ,  H01L41/337

Abstract: A method of manufacturing surface acoustic wave device chips includes grinding a reverse side of a wafer with a surface acoustic wave device formed in each area demarcated by a plurality of crossing projected dicing lines on a face side of the wafer; before or after grinding, applying a laser beam to the reverse side of the wafer such that the laser beam is focused at a position within the wafer, the position being closer to the face side of the wafer than a position corresponding to a reverse side of each of the surface acoustic wave device chips to be produced from the wafer, thereby forming a modified layer for diffusing an acoustic wave; and after grinding and applying the laser beam, dividing the wafer along the projected dicing lines into a plurality of the surface acoustic wave device chips.

公开(公告)号：US10720566B2

公开(公告)日：2020-07-21

申请号：US16135577

申请日：2018-09-19

Applicant: NGK INSULATORS, LTD.

Inventor： Tomoyoshi Tai ,  Yuji Hori ,  Keiichiro Asai ,  Takashi Yoshino ,  Masashi Goto ,  Masahiko Namerikawa

IPC: H01L41/313 ,  H01L41/22 ,  H03H9/02 ,  H01L41/09 ,  H01L41/187 ,  H01L41/337 ,  H03H9/25 ,  H03H3/08 ,  H01L23/00 ,  H01L21/20

Abstract: It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.