公开(公告)号：US07772591B1

公开(公告)日：2010-08-10

申请号：US11595329

申请日：2006-11-10

申请人： Chih-Ching Shih ,  Cheng H. Huang ,  Hugh Sung-Ki O ,  Yow-Juang (Bill) Liu

发明人： Chih-Ching Shih ,  Cheng H. Huang ,  Hugh Sung-Ki O ,  Yow-Juang (Bill) Liu

IPC分类号： H01L31/036

CPC分类号： H01L29/78 ,  H01L27/0203 ,  H01L27/112 ,  H01L27/11206

摘要： Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) transistor serves as an electrically-programmable antifuse. The antifuse transistor has source, drain, gate, and substrate terminals. The gate has an associated gate oxide. In its unprogrammed state, the gate oxide is intact and the antifuse has a relatively high resistance. During programming, the gate oxide breaks down, so in its programmed state the antifuse transistor has a relatively low resistance. The antifuse transistor can be programmed by injecting hot carriers into the substrate of the device in the vicinity of the drain. Because there are more hot carriers at the drain than at the substrate, the gate oxide is stressed asymmetrically, which enhances programming efficiency. Feedback can be used to assist in turning the antifuse transistor on to inject the hot carriers.

摘要翻译： 提供集成电路反熔丝电路。 金属氧化物半导体（MOS）晶体管用作电可编程反熔丝。 反熔丝晶体管具有源极，漏极，栅极和衬底端子。 栅极具有相关的栅极氧化物。 在其未编程状态下，栅极氧化物是完整的，并且反熔丝具有相对较高的电阻。 在编程期间，栅极氧化物分解，因此在其编程状态下，反熔丝晶体管具有相对低的电阻。 可以通过将热载流子注入到漏极附近的器件的衬底中来编程反熔丝晶体管。 由于漏极处的热载流子比衬底上的热载流子多，所以栅极氧化物不对称地受到应力，从而提高了编程效率。 可以使用反馈来帮助反熔丝晶体管打开以注入热载体。

公开(公告)号：US5989317A

公开(公告)日：1999-11-23

申请号：US856125

申请日：1997-05-14

申请人： Cheng H. Huang ,  Ray C. Wang ,  Teh Y. Liu ,  Cheng H. Chao

发明人： Cheng H. Huang ,  Ray C. Wang ,  Teh Y. Liu ,  Cheng H. Chao

IPC分类号： B01D19/00

CPC分类号： B01D19/0068

摘要： The present invention discloses a closed-loop method for recovering a process liquid and eliminating trapped air contained in the process liquid by utilizing a manual pump having generally a bellow construction for transporting the process liquid that contains trapped air back into a liquid reservoir for venting the trapped air.

摘要翻译： 本发明公开了一种闭环方法，用于回收工艺液体并通过利用通常具有波纹管结构的手动泵来除去包含在处理液体中的被捕获的空气，所述手动泵将包含被捕获的空气的处理液输回到液体储存器中， 被困空气

公开(公告)号：US07272067B1

公开(公告)日：2007-09-18

申请号：US11060925

申请日：2005-02-18

申请人： Cheng H. Huang ,  Yowjuang Liu ,  Chih-Ching Shih ,  Hugh Sung-Ki O

发明人： Cheng H. Huang ,  Yowjuang Liu ,  Chih-Ching Shih ,  Hugh Sung-Ki O

IPC分类号： G11C17/18

CPC分类号： H01L27/11206 ,  G11C17/16 ,  H01L23/5252 ,  H01L27/112 ,  H01L27/1203 ,  H01L2924/0002 ,  Y10S438/983 ,  H01L2924/00

摘要： Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse transistor is off and has a relatively high resistance. During programming, the antifuse transistor is turned on which melts the underlying silicon and causes a permanent reduction in the transistor's resistance. A sensing circuit monitors the resistance of the antifuse transistor and supplies a high or low output signal accordingly. The antifuse transistor may be turned on during programming by raising the voltage at its substrate relative to its source. The substrate may be connected to ground through a resistor. The substrate may be biased by causing current to flow through the resistor. Current may be made to flow through the resistor by inducing avalanche breakdown of the drain-substrate junction or by producing Zener breakdown of external Zener diode circuitry connected to the resistor.

摘要翻译： 提供集成电路反熔丝电路。 金属氧化物半导体（MOS）反熔丝晶体管用作电可编程反熔丝。 在其未编程状态下，反熔丝晶体管截止并具有较高的电阻。 在编程期间，反熔丝晶体管导通，其熔化下面的硅并导致晶体管电阻的永久性降低。 感测电路监视反熔丝晶体管的电阻并相应地提供高或低输出信号。 反熔丝晶体管可以在编程期间通过在其衬底处相对于其源极升高电压而导通。 衬底可以通过电阻器接地。 可能通过使电流流过电阻器而使衬底偏置。 可以通过引起漏极 - 衬底结的雪崩击穿或通过产生连接到电阻器的外部齐纳二极管电路的齐纳击穿来使电流流过电阻器。

公开(公告)号：US07157782B1

公开(公告)日：2007-01-02

申请号：US10780427

申请日：2004-02-17

申请人： Chih-Ching Shih ,  Cheng H. Huang ,  Hugh Sung-Ki O ,  Yow-Juang Liu

发明人： Chih-Ching Shih ,  Cheng H. Huang ,  Hugh Sung-Ki O ,  Yow-Juang Liu

IPC分类号： H01L29/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L23/58

CPC分类号： H01L29/78 ,  H01L27/0203 ,  H01L27/112 ,  H01L27/11206

摘要： Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) transistor serves as an electrically-programmable antifuse. The antifuse transistor has source, drain, gate, and substrate terminals. The gate has an associated gate oxide. In its unprogrammed state, the gate oxide is intact and the antifuse has a relatively high resistance. During programming, the gate oxide breaks down, so in its programmed state the antifuse transistor has a relatively low resistance. The antifuse transistor can be programmed by injecting hot carriers into the substrate of the device in the vicinity of the drain. Because there are more hot carriers at the drain than at the substrate, the gate oxide is stressed asymmetrically, which enhances programming efficiency. Feedback can be used to assist in turning the antifuse transistor on to inject the hot carriers.

摘要翻译： 提供集成电路反熔丝电路。 金属氧化物半导体（MOS）晶体管用作电可编程反熔丝。 反熔丝晶体管具有源极，漏极，栅极和衬底端子。 栅极具有相关的栅极氧化物。 在其未编程状态下，栅极氧化物是完整的，并且反熔丝具有相对较高的电阻。 在编程期间，栅极氧化物分解，因此在其编程状态下，反熔丝晶体管具有相对低的电阻。 可以通过将热载流子注入到漏极附近的器件的衬底中来编程反熔丝晶体管。 由于漏极处的热载流子比衬底上的热载流子多，所以栅极氧化物不对称地受到应力，从而提高了编程效率。 可以使用反馈来帮助反熔丝晶体管打开以注入热载体。

公开(公告)号：US5308787A

公开(公告)日：1994-05-03

申请号：US139860

申请日：1993-10-22

申请人： Gary Hong ,  Cheng H. Huang ,  Hong-Tsz Pan

发明人： Gary Hong ,  Cheng H. Huang ,  Hong-Tsz Pan

IPC分类号： H01L21/32 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/32 ,  H01L21/76213

摘要： A new method of local oxidation using a nitrogen implant through a spin-on-glass film is described. A thin silicon oxide layer is formed over the surface of a silicon substrate. A layer of silicon nitride is deposited overlying the silicon oxide layer. The silicon oxide and silicon nitride layers are patterned to provide openings of various sizes exposing portions of the silicon substrate to be oxidized. Ions are selectively implanted into the silicon substrate through the openings. The patterned surface of the substrate is covered with a spin-on-glass material. The spin-on-glass material is thicker within the smaller openings and thinner within the larger openings. The spin-on-glass material is soft-baked. Nitrogen ions are selectively implanted into the silicon substrate through the spin-on-glass material within the openings wherein fewer nitrogen ions are implanted through the thicker spin-on-glass material within the smaller openings and more nitrogen ions are implanted through the thinner spin-on-glass material within the larger openings. The spin-on-glass material is removed. Field oxide regions are grown within the openings wherein the rate of field oxidation is inhibited most within the openings through which a larger concentration of nitrogen ions were implanted and inhibited to a lesser extent in openings through which smaller concentrations of nitrogen ions were implanted resulting in nearly equal thicknesses of field oxide regions in all openings of various sizes.

摘要翻译： 描述了通过旋涂玻璃膜使用氮植入物的局部氧化的新方法。 在硅衬底的表面上形成薄的氧化硅层。 覆盖在氧化硅层上的氮化硅层被沉积。 将氧化硅和氮化硅层图案化以提供暴露要被氧化的硅衬底的部分的各种尺寸的开口。 通过开口将离子选择性地植入到硅衬底中。 衬底的图案化表面被旋涂玻璃材料覆盖。 旋涂玻璃材料在较小开口内较厚，较大开口内较薄。 旋涂玻璃材料是软烘烤的。 通过开口内的旋涂玻​​璃材料将氮离子选择性地注入到硅衬底中，其中较少的氮离子通过更小的开口内的较厚的旋涂玻璃材料注入，并且通过较薄的自旋玻璃材料注入更多的氮离子， 在较大开口内的玻璃材料。 去除旋涂玻璃材料。 场内氧化物区域在开口内生长，其中在开口内最大程度地抑制了场氧化的速率，通过该开口，较大浓度的氮离子被注入并且在较小的程度上被抑制，通过该开口，较少的氮离子注入量导致几乎 各种尺寸的所有开口中的场氧化物区域的厚度相等。