公开(公告)号：US20120061771A1

公开(公告)日：2012-03-15

申请号：US13092992

申请日：2011-04-25

Applicant: Chung-Che YU ,  Kuo-Wei PENG ,  Li-Min LEE

Inventor： Chung-Che YU ,  Kuo-Wei PENG ,  Li-Min LEE

IPC: H01L27/088 ,  H01L29/78

CPC classification number: H01L29/7816 ,  H01L27/0266 ,  H01L29/0696 ,  H01L29/4238 ,  H01L29/7802

Abstract: A MOSFET layout is disclosed. The MOSFET comprises a drain region, a gate region, a source region and a body region. The gate region is disposed outside the drain region and adjacent to the drain region. The source region has a plurality of source sections, which are disposed outside of the gate region and adjacent to the gate region. Each of two adjacent source sections has a source blank zone there between. The body region has at least two body portions, which are disposed at the source blank zones and adjacent to the gate region.

Abstract translation: 公开了MOSFET布局。 MOSFET包括漏极区域，栅极区域，源极区域和体区域。 栅极区域设置在漏极区域的外侧并与漏极区域相邻。 源极区域具有多个源极区域，其设置在栅极区域的外部并且与栅极区域相邻。 两个相邻源段中的每一个在其间具有源空白区。 身体区域具有至少两个主体部分，其被设置在源空白区域并且邻近门区域。