公开(公告)号：US20080076228A1

公开(公告)日：2008-03-27

申请号：US11533785

申请日：2006-09-21

Applicant: Mark Dyson ,  Daniel C. Kerr ,  Nace M. Rossi

Inventor： Mark Dyson ,  Daniel C. Kerr ,  Nace M. Rossi

IPC: H01L21/331

CPC classification number: H01L29/7322 ,  H01L21/743 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/66272

Abstract: The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately contacts the collector.

Abstract translation: 本发明在一个方面提供了一种半导体器件，其包括位于半导体衬底内的双极晶体管的集电极和埋入触点，所述埋入触点的至少一部分位于集电器中至足以充分接触集电极的深度。

公开(公告)号：US20080064177A1

公开(公告)日：2008-03-13

申请号：US11531477

申请日：2006-09-13

Applicant: Alan S. Chen ,  Mark Dyson ,  Daniel C. Kerr ,  Nace M. Rossi

Inventor： Alan S. Chen ,  Mark Dyson ,  Daniel C. Kerr ,  Nace M. Rossi

IPC: H01L21/331

CPC classification number: H01L29/7322 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0821 ,  H01L29/36 ,  H01L29/66272

Abstract: The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector by at least about 0.9 microns. The invention also provides a method for forming this device.

Abstract translation: 本发明在一个方面提供了一种半导体器件，其包括位于半导体衬底中的集电极和位于集电极下方的隔离区域，其中将隔离区域的峰值掺杂浓度与集电极的峰值掺杂浓度分开， 至少约0.9微米。 本发明还提供了一种用于形成该装置的方法。