摘要:
In order to reduce the adverse influence of contamination composed of silicon dioxide, hydrocarbons and/or metals within an EUV lithography apparatus on the reflectivity, a reflective optical element (50) for the extreme ultraviolet wavelength range having a reflective surface (59) is proposed, wherein the multilayer coating of the reflective surface (59) has a topmost layer (56) composed of a fluoride. The contaminations mentioned, which deposit on the reflective optical element (50) during the operation of the EUV lithography apparatus, are converted into volatile compounds by the addition of at least one of the substances mentioned hereinafter: atomic hydrogen, molecular hydrogen, perfluorinated alkanes such as e.g. tetrafluoromethane, oxygen, nitrogen and/or helium.
摘要:
In order to clean optical components (35) inside an EUV lithography device in a gentle manner, a cleaning module for an EUV lithography device includes a supply line for molecular hydrogen and a heating filament for producing atomic hydrogen and hydrogen ions for cleaning purposes. The cleaning module also has an element, (33) arranged to apply an electric and/or magnetic field, downstream of the heating filament (29) in the direction of flow of the hydrogen (31, 32). The element can be designed as a deflection unit, as a filter unit and/or as an acceleration unit for the ion beam (32).