公开(公告)号：US09153651B2

公开(公告)日：2015-10-06

申请号：US13757699

申请日：2013-02-01

申请人： Electronics and Telecommunications Research Institute

发明人： Sang Chul Lim ,  Ji-Young Oh ,  Seongdeok Ahn ,  Kyoung Ik Cho ,  Sang Seok Lee ,  Jae Bon Koo

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/26

CPC分类号： H01L29/263 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极 有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺 的氧气。