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公开(公告)号：US09177821B2
公开(公告)日：2015-11-03
申请号：US14259042
申请日：2014-04-22
Inventor： Soon-Won Jung , Jae Bon Koo , Chan Woo Park , Bock Soon Na , Sang Chul Lim , Sang Seok Lee , Kyoung Ik Cho , Hye Yong Chu
IPC: H01L21/338 , H01L21/311 , H01L29/66
CPC classification number: H01L21/311 , G09F9/301 , H01L29/66477 , H01L51/0023 , H01L51/0055 , H01L51/0525 , H01L51/102 , H05K1/0283 , H05K1/0333 , H05K1/16 , H05K3/0017 , H05K3/007 , H05K2201/0133 , H05K2201/0162 , H05K2201/09036 , H05K2201/09045 , H05K2201/10166 , H05K2201/2009 , H05K2203/308
Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.
Abstract translation: 提供一种制造电子电路的方法。 该方法包括制备基底，在基底上形成聚合物膜，图案化聚合物膜以形成聚合物图案，并在聚合物图案上形成电子器件。
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公开(公告)号：US09153651B2
公开(公告)日：2015-10-06
申请号：US13757699
申请日：2013-02-01
Inventor： Sang Chul Lim , Ji-Young Oh , Seongdeok Ahn , Kyoung Ik Cho , Sang Seok Lee , Jae Bon Koo
CPC classification number: H01L29/263 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78693 , H01L29/78696
Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.
Abstract translation: 提供一种薄膜晶体管及其制造方法。 薄膜晶体管的制造方法包括在基板上形成栅电极，形成与栅电极相邻的有源层，并具有氧化物半导体，在有源层上形成氧供给层，在栅极电极 有源层，形成耦合到有源层的源电极和漏电极，形成覆盖栅电极和栅电介质的平坦化层，形成暴露有源层的孔，并在气氛中对平坦化层进行热处理工艺 的氧气。
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公开(公告)号：US09040337B2
公开(公告)日：2015-05-26
申请号：US13840299
申请日：2013-03-15
Inventor： Chan Woo Park , Jae Bon Koo , Sang Chul Lim , Ji-Young Oh , Soon-Won Jung
IPC: H01L21/76 , H05K1/02 , H01L21/768 , H01L23/538 , H05K3/46
CPC classification number: H05K1/0283 , H01L21/76898 , H01L23/5387 , H01L29/78603 , H01L2924/0002 , H05K3/4644 , H05K2201/097 , H01L2924/00
Abstract: Provided are a stretchable electronic device and a method of manufacturing the same. The manufacturing method includes forming coil interconnection on a first substrate, forming a first stretchable insulating layer that covers the coil interconnection, forming a second substrate on the first stretchable insulating layer, separating the first substrate from the coiling interconnection and the first stretchable insulating layer, and forming a transistor on the coil interconnection.
Abstract translation: 提供一种可拉伸电子装置及其制造方法。 该制造方法包括在第一基板上形成线圈互连，形成覆盖线圈互连的第一可拉伸绝缘层，在第一可拉伸绝缘层上形成第二基板，将第一基板与卷绕互连和第一可拉伸绝缘层分离， 以及在线圈互连上形成晶体管。
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公开(公告)号：US10026844B2
公开(公告)日：2018-07-17
申请号：US15461567
申请日：2017-03-17
Inventor： Kyoung Ik Cho , Jae Bon Koo , Chan Woo Park , Bock Soon Na , Sang Seok Lee , Sang Chul Lim , Soon-Won Jung , Hye Yong Chu
IPC: H01L29/10 , H01L29/786 , H01L29/66 , H01L27/12 , H01L21/3105 , H01L21/311
Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
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公开(公告)号：US09807886B2
公开(公告)日：2017-10-31
申请号：US13772288
申请日：2013-02-20
Inventor： Chan Woo Park , Jae Bon Koo , Sang Chul Lim , Ji-Young Oh , Soon-Won Jung
CPC classification number: H05K3/10 , H05K1/0283 , H05K1/0287 , H05K1/181 , H05K3/0014 , H05K3/284
Abstract: Provided is an electronic circuit including a substrate having a flat device region and a curved interconnection region. A conduction line may extend along an uneven portion in the interconnection region and may be curved. The uneven portion and the conductive line may have a wavy shape. An external force applied to the electronic circuit may be absorbed by the uneven portion and the conductive line. The electronic device may not be affected by the external force. Therefore, functions of the electronic circuit may be maintained. A method of fabricating an electronic circuit according to the present invention may easily adjust areas and positions of the interconnection region and the device region.
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Patent Agency Ranking
公开(公告)号：US09634120B2
公开(公告)日：2017-04-25
申请号：US14610410
申请日：2015-01-30
Inventor： Kyoung Ik Cho , Jae Bon Koo , Chan Woo Park , Bock Soon Na , Sang Seok Lee , Sang Chul Lim , Soon-Won Jung , Hye Yong Chu
IPC: H01L29/10 , H01L29/66 , H01L29/786 , H01L27/12 , H01L21/3105
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
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公开(公告)号：US09535283B2
公开(公告)日：2017-01-03
申请号：US14286190
申请日：2014-05-23
Inventor： Yong Hae Kim , Gi Heon Kim , Hojun Ryu , Chi-Sun Hwang , Jong-Heon Yang , Sang Chul Lim , Jae Bon Koo , Jonghee Lee , Jeong Ik Lee
IPC: G02F1/1335
CPC classification number: G02F1/133553 , G02F1/133555 , G02F2001/133541 , G02F2201/44
Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.
Abstract translation: 提供一种显示装置及其制造方法。 显示装置包括：反射显示部，包括第一阴极电极和第一阳极电极和液晶层;发光显示部分，包括第二阴极电极和第二阳极电极;以及发光膜;以及薄膜晶体管 部分电连接到第一和第二阳极电极。 发光显示部还包括设置在第二阳极电极与发光膜之间的一侧的堤。
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公开(公告)号：US09263592B2
公开(公告)日：2016-02-16
申请号：US14020498
申请日：2013-09-06
Inventor： Su Jae Lee , Chi-Sun Hwang , Hye Yong Chu , Sang Chul Lim , Jae-Eun Pi , Min Ki Ryu
IPC: H01L29/786 , H01L29/66 , H01L21/02
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969 , H01L29/78696
Abstract: A transistor includes source/drain electrodes provided on a substrate; a semiconductor oxide layer provided between the source/drain electrodes; a gate electrode facing the semiconductor oxide layer; and a gate insulating layer interposed between the semiconductor oxide layer and the gate electrode, wherein the semiconductor oxide layer has a nano-layered structure including at least one first nano layer comprised of a first material and at least one second nano layer comprised of a second material that are alternatingly stacked one on another to provide at least one interface, and wherein the first material and the second material are different materials that are effective to form an electron transfer channel layer at the interface.
Abstract translation: 晶体管包括设置在基板上的源/漏电极; 设置在源极/漏极之间的半导体氧化物层; 面对半导体氧化物层的栅电极; 以及插入在所述半导体氧化物层和所述栅电极之间的栅极绝缘层，其中所述半导体氧化物层具有纳米层状结构，所述纳米层结构包括由第一材料构成的至少一个第一纳米层和由第二材料构成的至少一个第二纳米层 交替层叠在一起以提供至少一个界面的材料，并且其中所述第一材料和所述第二材料是在所述界面处有效形成电子传输沟道层的不同材料。
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公开(公告)号：US08912094B2
公开(公告)日：2014-12-16
申请号：US13846437
申请日：2013-03-18
Inventor： Jae Bon Koo , Chan Woo Park , Soon-Won Jung , Sang Chul Lim , Ji-Young Oh , Bock Soon Na , Hye Yong Chu
IPC: H01L21/44 , H01L21/768
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1262
Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.
Abstract translation: 提供一种制造可拉伸薄膜晶体管的方法。 制造可伸缩薄膜晶体管的方法包括：在模具基板上形成模具基板，形成可拉伸绝缘体，在可伸缩绝缘体上形成平坦的基板，去除模具基板，在可拉伸的绝缘体上形成不连续的和波纹的导线， 连接在电线之间的薄膜晶体管，以及去除平坦的基板。
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10.发明申请公开(公告)号：US20140076610A1
公开(公告)日：2014-03-20
申请号：US13934635
申请日：2013-07-03
Inventor： Yong Suk YANG , In-Kyu You , Minseok Kim , Soon-Won Jung , Bock Soon Na , Sang Chul Lim
CPC classification number: H05K1/02 , H01L51/0022 , H01L51/003 , H01L51/102 , H01L51/441 , H01L51/5203 , H05K1/0393 , H05K3/0058 , H05K3/207 , H05K2201/0376
Abstract: Disclosed are a method for manufacturing a planarizing printed electronic device and a planarizing printed electronic device manufactured by using the same by simply implementing a large-area embedded printed electronic device by coupling a printing process such as inkjet printing and gravure printing and a transferring process using a laminating device and particularly, solving defects due to large surface roughness and a thickness of a printed layer included in the printed electronic device, when manufacturing an embedded printed electronic device where a printed layer is embedded in a substrate.
Abstract translation: 公开了一种制造平面印刷电子器件的方法和通过使用它们简单地实现大面积嵌入式印刷电子器件而制造的平面化印刷电子器件，其通过联接诸如喷墨印刷和凹版印刷的印刷工艺和使用 层压装置，特别是在制造嵌入印刷电子器件时，其中印刷层嵌入基板中，特别是解决了印刷电子器件中包括的印刷层的大的表面粗糙度和厚度的缺陷。
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