Abstract:
Provided are a thermoelectric conversion element and a thermoelectric conversion module using the thermoelectric conversion element. The thermoelectric conversion element has a first substrate having a high thermal conduction portion which has a thermal conductivity higher than a thermal conductivity of other regions, a thermoelectric conversion layer formed on the first substrate, a pressure sensitive adhesive layer formed on the thermoelectric conversion layer, a second substrate formed on the pressure sensitive adhesive layer, having a concave portion, which at least partially overlaps the high thermal conduction portion of the first substrate in a plane direction and is on the pressure sensitive adhesive layer side, and made of a metal material, and an electrode pair connected to the thermoelectric conversion layer. According to the present invention, a thermoelectric conversion element and a thermoelectric conversion module are obtained which improve the heat utilization efficiency and generate electric power with excellent efficiency.
Abstract:
Provided are a thermoelectric conversion element which has a thermoelectric conversion layer made of an organic material and is capable of generating electric power at a favorable efficiency and a method for manufacturing the thermoelectric conversion element. When the thermoelectric conversion element has a first substrate having a highly thermal conductive portion having a higher thermal conductivity than other regions in a surface direction, a thermoelectric conversion layer which is formed on the first substrate, is made of an organic material, and has a higher electrical conductivity in the surface direction than in a thickness direction, and a second substrate which is formed on the thermoelectric conversion layer and has a highly thermal conductive portion which has a higher thermal conductivity than other regions in the surface direction and in which the highly thermal conductive portion does not fully overlap the highly thermal conductive portion of the first substrate in the surface direction, the problem is solved.
Abstract:
A method of producing a thermoelectric conversion element which has, on a substrate, a first electrode, a thermoelectric conversion layer, and a second electrode, which method comprising a step of preparing a dispersion for the thermoelectric conversion layer containing a nano conductive material by subjecting at least the material and a dispersion medium to a high-speed rotating thin film dispersion method; and a step of applying the prepared dispersion on or above the substrate and then drying the dispersion; and a method of preparing a dispersion for a thermoelectric conversion layer, which method comprises dispersing a nano conductive material into the dispersion medium by subjecting at least the material and the medium to a high-speed rotating thin film dispersion method.
Abstract:
An electrically conductive composition, containing (A) a carbon nanotube, (B) an electrically conductive polymer, and (C) an onium salt compound, an electrically conductive film using the composition, and a method of producing the electrically conductive film.
Abstract:
The present invention provides a surface-modified inorganic nitride having excellent dispersibility. Furthermore, the present invention provides a composition, a thermally conductive material, and a device with a thermally conductive layer which contain the surface-modified inorganic nitride. The surface-modified inorganic nitride of the present invention includes an inorganic nitride, and a compound which is represented by General Formula (1) and is adsorbed onto a surface of the inorganic nitride.
Abstract:
A thermoelectric conversion module has a long support, a plurality of first metal layers formed on one surface of the support at intervals in a longitudinal direction of the support, a plurality of thermoelectric conversion layers formed at intervals in the longitudinal direction of the support, and a connection electrode for connecting the thermoelectric conversion layers adjacent in the longitudinal direction of the support, and a second metal layer formed on the other surface of the support, in which the first and the second metal layers have low rigidity portions that have rigidity lower than rigidity of other regions and extend in a width direction of the support, the low rigidity portions of the first and the second metal layers are formed at the same positions in the longitudinal direction, and the support is alternately bent into a mountain fold and a valley fold at the low rigidity portions.
Abstract:
An object of the present invention is to provide a thermoelectric conversion element having excellent thermoelectric conversion performance and excellent high-temperature durability, a method for manufacturing the thermoelectric conversion element, a thermoelectric conversion module, and a method for manufacturing the thermoelectric conversion module. A thermoelectric conversion element of the present invention has a thermoelectric conversion layer containing an organic thermoelectric conversion material and a dopant, a pair of electrodes disposed at positions separated from each other, and a buffer layer which is disposed between the thermoelectric conversion layer and each of the electrodes and electrically connects the thermoelectric conversion layer and the electrodes to each other, in which the buffer layer contains the same material as the organic thermoelectric conversion material contained in the thermoelectric conversion layer, the buffer layer does not contain a dopant or contains a dopant, and in a case where the buffer layer contains a dopant, a ratio of the dopant contained in the buffer layer to the dopant contained in the thermoelectric conversion layer is equal to or lower than 0.1.
Abstract:
An object of the present invention is to provide a thermoelectric conversion layer, which has a high power factor and a low thermal conductivity and exhibits the characteristics of an n-type excellently maintaining performance stability even being exposed to a high temperature for a long period of time, a thermoelectric conversion element having the thermoelectric conversion layer as an n-type thermoelectric conversion layer, and a composition for forming a thermoelectric conversion layer used for forming the thermoelectric conversion layer.The thermoelectric conversion layer of the present invention contains a carbon nanotube-containing n-type thermoelectric conversion material and a hydrogen bonding resin.
Abstract:
Provided are a thermoelectric conversion element in which an electrode pair is formed on a substrate, an insulating layer is formed between the electrode pair, an n-type thermoelectric conversion layer containing an organic n-type thermoelectric conversion material is formed on one electrode, and a p-type thermoelectric conversion layer containing an organic p-type thermoelectric conversion material is formed on the other electrode, while the n-type thermoelectric conversion layer and the p-type thermoelectric conversion layer have a separation region in which the two members are arranged apart by the insulating layer and a contact region formed thereabove, in which the two members are joined to each other; and a thermoelectric conversion module using this thermoelectric conversion element.
Abstract:
A thermoelectric generation module having: a thermoelectric conversion layer in which a plurality of thermoelectric conversion elements are electrically connected to each other in series and radially disposed in a principal surface direction of a substrate; a heat radiation layer that is connected to a center of the thermoelectric conversion layer and disposed on the side opposite to the principal surface of the substrate; a heat insulating layer disposed at a periphery of the heat radiation layer; and a heat absorbing layer that is connected to the periphery of the thermoelectric conversion layer and disposed on the principal surface side of the substrate, wherein the thermoelectric conversion elements each are composed of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor and the n-type semiconductor are alternately and radially disposed, and electrically connected to each other in series with electrodes in sequence.