公开(公告)号：US09958441B2

公开(公告)日：2018-05-01

申请号：US15204666

申请日：2016-07-07

Applicant: General Electric Company

Inventor： An-Ping Zhang ,  Anthony John Murray ,  Rui Chen

IPC: G01N33/543 ,  B82Y15/00 ,  G01N27/327 ,  G01N27/414 ,  G01N33/545 ,  G01N33/53 ,  B82Y40/00

CPC classification number: G01N33/54373 ,  B82Y15/00 ,  B82Y40/00 ,  G01N27/327 ,  G01N27/4145 ,  G01N27/4146 ,  G01N33/545

Abstract: A biosensing FET device, comprising a plurality of nanostructured SOI channels, that is adapted to operate in solutions having a high ionic strength and provides improves sensitivity and detection. Generally, the biosensing device comprises an underlying substrate layer, an insulator and a semiconductor layer and a plurality of channels in the semiconductor layer comprising a plurality of whole or partially formed nanopores in the channels.