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    Protecting a Substrate Region During Fabrication of a FET Sensor
    5.
    发明申请
    Protecting a Substrate Region During Fabrication of a FET Sensor 审中-公开

    公开(公告)号：US20190195827A1

    公开(公告)日：2019-06-27

    申请号：US16228092

    申请日：2018-12-20

    申请人： IMEC VZW

    发明人： Koen Martens ,  Nadine Collaert ,  Eddy Kunnen ,  Simone Severi

    IPC分类号： G01N27/414

    CPC分类号： G01N27/4146 ,  G01N27/4145

    摘要： Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.

    NOVEL ACTIVE NOISE CONTROL BIOSENSOR
    6.
    发明申请
    NOVEL ACTIVE NOISE CONTROL BIOSENSOR 审中-公开

    公开(公告)号：US20190195826A1

    公开(公告)日：2019-06-27

    申请号：US16322427

    申请日：2016-10-20

    申请人： NANJING UNIVERSITY

    发明人： Feng YAN ,  Cheng MAO ,  Limin ZHANG ,  Cheng YANG ,  Xiaofeng BU ,  Haowen MA

    IPC分类号： G01N27/414 ,  G01N33/50 ,  G10K11/175

    CPC分类号： G01N27/4145 ,  G01N27/4148 ,  G01N33/50 ,  G10K11/175

    摘要： Provided is a novel active noise control biosensor including a detection plate, a signal detection module and a control module. The signal detection module includes a signal superimposable transistor and a readout circuit. The signal superimposable transistor has a secondary input terminal and a primary input terminal. The detection plate inputs a detected primary signal to the primary input terminal, and the control module processes an output signal from the signal detection module by a signal processing system and generates and inputs a secondary signal to the secondary input terminal. The primary signal and the secondary signal received by the signal superimposable transistor are superimposed to realize active noise control, and the superimposed signal is read out by the readout circuit and output as an input signal to the control module. The biosensor can achieve the detection of potential or charges and have active noise control characteristics.

    FIELD EFFECT SENSORS
    9.
    发明申请
    FIELD EFFECT SENSORS 审中-公开

    公开(公告)号：US20190041354A1

    公开(公告)日：2019-02-07

    申请号：US16024299

    申请日：2018-06-29

    申请人： ILLUMINA, INC.

    发明人： Boyan Boyanov

    IPC分类号： G01N27/414 ,  H03K3/03 ,  C12Q1/6869 ,  H01L21/02

    CPC分类号： G01N27/4145 ,  B82Y10/00 ,  B82Y15/00 ,  C12Q1/6869 ,  G01N27/4146 ,  G01R19/0092 ,  H01L21/0259 ,  H01L29/068 ,  H01L29/775 ,  H03K3/0315 ,  C12Q2563/157 ,  C12Q2565/607

    摘要： Apparatus and methods are disclosed for single molecule field effect sensors having conductive channels functionalized with a single active moiety. A region of a nanostructure (e.g., such as a silicon nanowire or a carbon nanotube) provide the conductive channel. Trapped state density of the nanostructure is modified for a portion of the nanostructure in proximity with a location where the active moiety is linked to the nanostructure. In one example, the semiconductor device includes a source, a drain, a channel including a nanostructure having a modified portion with an increased trap state density, the modified portion being further functionalized with an active moiety. A gate terminal is in electrical communication with the nanostructure. As a varying electrical signal is applied to an ionic solution in contact with the nanostructure channel, changes in current observed from the semiconductor device can be used to identify composition of the analyte.

    Digital Time Domain Readout Circuit for BioFET Sensors
    10.
    发明申请
    Digital Time Domain Readout Circuit for BioFET Sensors 审中-公开

    公开(公告)号：US20190033251A1

    公开(公告)日：2019-01-31

    申请号：US15661788

    申请日：2017-07-27

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd

    发明人： Yu-Jie HUANG ,  Jui-Cheng Huang

    IPC分类号： G01N27/414

    CPC分类号： G01N27/4145 ,  G01N27/4148

    摘要： Various bioFET sensor readout circuits and their methods of operation are described. A readout circuit includes a plurality of logic gates coupled in cascade, a delay extractor, and a counting module. Each logic gate of the plurality of logic gates includes at least one bioFET sensor. The delay extractor is designed to generate a pulse-width signal based on a time difference between an output signal from the plurality of logic gates and a reference signal. The counting module is designed to receive the pulse-width signal and output a digital count corresponding to a width of the pulse-width signal.