公开(公告)号：US09236345B2

公开(公告)日：2016-01-12

申请号：US14223592

申请日：2014-03-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emre Alptekin ,  Nicolas L. Breil ,  Christian Lavoie ,  Ahmet S. Ozcan ,  Kathryn T. Schonenberg

IPC: H01L29/78 ,  H01L23/532 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/417 ,  H01L21/285

CPC classification number: H01L21/76886 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092 ,  H01L29/41766 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. An interfacial oxide layer is then formed in each contact opening and on an exposed surface portion of the interfacial oxide layer. A NiPt alloy layer is formed within each opening and on the exposed surface portion of each interfacial oxide layer. An anneal is then performed that forms a contact structure of, from bottom to top, a nickel disilicide alloy body having an inverted pyramidal shape, a Pt rich silicide cap region and an oxygen rich region. A metal contact is then formed within each contact opening and atop the oxygen rich region of each contact structure.

Abstract translation: 接触开口形成为露出半导体衬底的表面部分的电介质材料。 然后在每个接触开口中和界面氧化物层的暴露表面部分上形成界面氧化物层。 在每个开口内和每个界面氧化物层的暴露的表面部分上形成NiPt合金层。 然后进行退火，其形成从底部到顶部具有倒金字塔形状，富Pt硅化物帽区域和富氧区域的二硅化镍合金体的接触结构。 然后在每个接触开口内和每个接触结构的富氧区顶上形成金属接触。