公开(公告)号：US20180026580A1

公开(公告)日：2018-01-25

申请号：US15213529

申请日：2016-07-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Chi Zhang ,  Arul Balasubramaniyan

IPC: H03B5/12

CPC classification number: H03B5/1265 ,  H03B5/1212 ,  H03B5/1228 ,  H03B2200/004 ,  H03J5/00

Abstract: Embodiments of the present disclosure provide a circuit structure including: a switching transistor including a gate terminal, a back-gate terminal, a source terminal, and a drain terminal; a biasing node coupled to the back-gate terminal of the switching transistor, the biasing node being alternately selectable between an on state and an off state; a first capacitor source-coupled to the switching transistor; a second capacitor drain-coupled to the switching capacitor; and a first enabling node source-coupled to the switching transistor, the first enabling node being alternately selectable between an on state and an off state.