公开(公告)号：US20140148011A1

公开(公告)日：2014-05-29

申请号：US13688258

申请日：2012-11-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dae-han Choi ,  Dae Geun Yang ,  Chang Ho Maeng

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/3083 ,  H01L29/66795

Abstract: An improved method of forming semiconductor fins is disclosed. Cavities are formed by etching a semiconductor substrate to a first depth. A surface treatment layer such as a nitride layer is then deposited or formed on the interior surface of the cavities. The etch then continues deeper, while the surface treatment layer protects the upper portion of the cavities.

Abstract translation: 公开了一种形成半导体鳍片的改进方法。 通过将半导体衬底蚀刻到第一深度来形成空穴。 然后在空腔的内表面上沉积或形成诸如氮化物层的表面处理层。 然后蚀刻继续更深，同时表面处理层保护空腔的上部。