公开(公告)号：US09257329B2

公开(公告)日：2016-02-09

申请号：US14185398

申请日：2014-02-20

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Oliver Mieth ,  Carsten Peters ,  Torsten Huisinga

IPC: H01L21/3105 ,  H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/3105 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76895

Abstract: Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes densifying an upper-surface portion of an ILD layer of dielectric material that overlies a metallization layer above a semiconductor substrate to form a densified surface layer of dielectric material. The densified surface layer and the ILD layer are etched through to expose a metal line of the metallization layer.

Abstract translation: 提供了制造集成电路的方法。 在一个示例中，用于制造集成电路的方法包括使覆盖在半导体衬底之上的金属化层上的介电材料的ILD层的上表面部分致密化，以形成电介质材料的致密表面层。 蚀刻致密表面层和ILD层以暴露金属化层的金属线。