公开(公告)号：US20170338343A1

公开(公告)日：2017-11-23

申请号：US15161604

申请日：2016-05-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sylvain Henri Baudot ,  Gunter Grasshoff ,  Juergen Faul ,  Peter Javorka

IPC: H01L29/78 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/08 ,  H01L27/12

CPC classification number: H01L29/7838 ,  H01L21/76 ,  H01L21/761 ,  H01L21/76224 ,  H01L21/823814 ,  H01L21/823892 ,  H01L21/84 ,  H01L27/092 ,  H01L27/0928 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/7831 ,  H01L29/78648 ,  H01L29/78654

Abstract: A semiconductor device is provided comprising a silicon-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate and a semiconductor layer formed on the buried oxide layer and a transistor device, wherein the transistor device comprises a gate electrode formed by a part of the semiconductor bulk substrate, a gate insulation layer formed by a part of the buried oxide layer and a channel region formed in a part of the semiconductor layer.