公开(公告)号：US20160365277A1

公开(公告)日：2016-12-15

申请号：US14740035

申请日：2015-06-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Qiang FANG ,  Zhiguo SUN ,  Jiehui SHU

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53238

Abstract: A starting metallization structure for electrically coupling one or more underlying semiconductor devices, the structure including a bottom layer of dielectric material with metal-filled via(s) situated therein, a protective layer over the bottom layer, and a top layer of dielectric material over the protective layer. A sacrificial layer of amorphous silicon is formed over the top layer of dielectric material, a protective layer is formed over the sacrificial layer and via(s) through each layer above the metal-filled via(s) to expose the metal of the metal-filled via(s). The protective layer is then selectively removed, as well as the sacrificial layer of amorphous silicon.

Abstract translation: 用于电耦合一个或多个下层半导体器件的起始金属化结构，所述结构包括介电材料的底层，其中位于其中的金属填充通孔，底层上的保护层和介电材料的顶层 保护层。 在电介质材料的顶层上形成非晶硅的牺牲层，在牺牲层上方形成保护层，并且通过穿过金属填充的通孔上方的每个层的通孔，以暴露金属 - 通过（s）填充。 然后选择性地去除保护层，以及非晶硅的牺牲层。