公开(公告)号：US20130113019A1

公开(公告)日：2013-05-09

申请号：US13663589

申请日：2012-10-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Carsten Reichel ,  Thorsten Kammler ,  Annekathrin Zeun ,  Stephan Kronholz

IPC: H01L29/78 ,  H01L27/092

CPC classification number: H01L29/78 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823481 ,  H01L27/092

Abstract: Generally, the subject matter disclosed herein is directed to semiconductor devices with reduced threshold variability having a threshold adjusting semiconductor material in the device active region. One illustrative semiconductor device disclosed herein includes an active region in a semiconductor layer of a semiconductor device substrate, the active region having a region length and a region width that are laterally delineated by an isolation structure. The semiconductor device further includes a threshold adjusting semiconductor alloy material layer that is positioned on the active region substantially without overlapping the isolation structure, the threshold adjusting semiconductor alloy material layer having a layer length that is less than the region length. Additionally, the disclosed semiconductor device includes a gate electrode structure that is positioned above the threshold adjusting semiconductor alloy material layer, the gate electrode structure including a high-k dielectric material and a metal-containing electrode material formed above the high-k dielectric material.

Abstract translation: 通常，本文公开的主题涉及具有阈值可变性降低的半导体器件，其具有在器件有源区域中的阈值调节半导体材料。 本文公开的一个说明性的半导体器件包括在半导体器件衬底的半导体层中的有源区，该有源区具有由隔离结构横向描绘的区域长度和区域宽度。 所述半导体器件还包括阈值调节半导体合金材料层，所述阈值调节半导体合金材料层基本上不与所述隔离结构重叠地位于所述有源区上，所述阈值调节半导体合金材料层具有小于所述区域长度的层长度。 此外，所公开的半导体器件包括位于阈值调节半导体合金材料层上方的栅电极结构，该栅电极结构包括形成在高k电介质材料上方的高k电介质材料和含金属电极材料。