公开(公告)号：US20230128786A1

公开(公告)日：2023-04-27

申请号：US17510934

申请日：2021-10-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ryan Sporer ,  Yusheng Bian ,  Takako Hirokawa

IPC: G02B6/42 ,  G02B6/30

Abstract: Structures including an optical component, such as an edge coupler, and methods of fabricating a structure that includes an optical component, such as an edge coupler. The structure includes a substrate having a sealed cavity, an optical component, and a dielectric layer between the optical component and the sealed cavity. The optical component is positioned vertically over the substrate and the dielectric layer, and the optical component overlaps with the sealed cavity in the substrate.

公开(公告)号：US11217678B2

公开(公告)日：2022-01-04

申请号：US16680196

申请日：2019-11-11

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： George Robert Mulfinger ,  Ryan Sporer ,  Rick J. Carter ,  Peter Baars ,  Hans-Jürgen Thees ,  Jan Höntschel

IPC: H01L29/66 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L29/08 ,  H01L21/8234

Abstract: A method of forming matched PFET/NFET spacers with differential widths for SG and EG structures and a method of forming differential width nitride spacers for SG NFET and SG PFET structures and PFET/NFET EG structures and respective resulting devices are provided. Embodiments include providing PFET SG and EG structures and NFET SG and EG structures; forming a first nitride layer over the substrate; forming an oxide liner; forming a second nitride layer on sidewalls of the PFET and NFET EG structures; removing horizontal portions of the first nitride layer and the oxide liner over the PFET SG and EG structures; forming RSD structures on opposite sides of each of the PFET SG and EG structures; removing horizontal portions of the first nitride layer and the oxide liner over the NFET SG and EG structures; and forming RSD structures on opposite sides of each of the NFET SG and EG structures.