公开(公告)号：US10460800B2

公开(公告)日：2019-10-29

申请号：US15748667

申请日：2015-07-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Gregg B Lesartre ,  Martin Foltin ,  Yoocharn Jeon

IPC: G11C11/00 ,  G11C13/00 ,  G11C7/06 ,  G11C7/10 ,  G11C11/4074

Abstract: A data storage device includes a memory cell array and sense circuitry to detect a data value stored to a memory cell of the memory cell array. The data storage device also includes a controller to bias the sense circuitry during a read phase of a write operation to increase the probability that the sense circuitry will detect an opposite value that is opposite from the value being written to the memory cell.