SEMICONDUCTOR FORMATIONS
    11.
    发明申请

    公开(公告)号:US20210313176A1

    公开(公告)日:2021-10-07

    申请号:US17262766

    申请日:2018-11-08

    Abstract: A method may include ejecting, from a nozzle, a first printable ammonium-based chalcogenometalate fluid comprising a first dopant onto a substrate to form a layer of the first printable ammonium-based chalcogenometalate fluid; heating, at a first temperature, the layer of first printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX2 with the first dopant distributed therethrough; ejecting, from the nozzle, a second printable ammonium-based chalcogenometalate fluid comprising a second dopant onto the substrate to form a layer of the second printable ammonium-based chalcogenometalate fluid; and heating, at a second and higher temperature, the layers of first and second printable ammonium-based chalcogenometalate fluid.

    THREE-DIMENSIONAL PRINTED SENSORS
    13.
    发明公开

    公开(公告)号:US20230296547A1

    公开(公告)日:2023-09-21

    申请号:US18019703

    申请日:2020-08-03

    CPC classification number: G01N27/227 G01N27/223

    Abstract: In one example in accordance with the present disclosure, a three-dimensional (3D) printed sensor system is described. The 3D printed sensor system includes a 3D printed object. The 3D printed sensor system also includes a 3D printed sensor on a body of the 3D printed object. The 3D printed sensor includes a dielectric region disposed between electrodes. A capacitance of the dielectric region is indicative of an environmental condition of the 3D printed object. The 3D printed sensor system also includes a controller integrated with the body of the 3D printed object. The controller is to measure a capacitance of the 3D printed sensor.

Patent Agency Ranking