SUBSTRATE FOR CARBON NANOTUBE GROWTH AND METHOD FOR MANUFACTURING THE SAME
    11.
    发明申请
    SUBSTRATE FOR CARBON NANOTUBE GROWTH AND METHOD FOR MANUFACTURING THE SAME 有权
    碳纳米管生长用基材及其制造方法

    公开(公告)号:US20140155250A1

    公开(公告)日:2014-06-05

    申请号:US14095426

    申请日:2013-12-03

    CPC classification number: B01J23/8906 B82Y30/00 B82Y40/00 C01B32/162

    Abstract: Provided is a substrate for carbon nanotube growth in which no metal particles as a catalyst aggregates and a method for manufacturing the substrate. A substrate for carbon nanotube growth 1 includes a base plate 2, a noble metal alloy catalyst 3 having an alloy of a noble metal and a transition metal, and a form-defining material layer 4 which allows the noble metal alloy catalyst 3 to be dispersed and arranged. A method for manufacturing a substrate for carbon nanotube growth 1 includes a step of sputtering a noble metal alloy on a base plate 2, a step of sputtering a form-defining material on the base plate 2, and a step of further sputtering the noble metal alloy on the form-defining material.

    Abstract translation: 本发明提供一种碳纳米管生长用基材,其中不含作为催化剂的金属颗粒聚集体及其制造方法。 用于碳纳米管生长的衬底1包括基板2,具有贵金属和过渡金属的合金的贵金属合金催化剂3和允许贵金属合金催化剂3分散的形式限定材料层4 并安排。 制造碳纳米管生长用基板1的方法包括在基板2上溅射贵金属合金的步骤,在基板2上溅射形成界定材料的步骤,以及进一步溅射贵金属 合金在形式定义材料上。

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