-
1.发明申请公开(公告)号：US20140155250A1
公开(公告)日：2014-06-05
申请号：US14095426
申请日：2013-12-03
发明人： Toshiyuki Ohashi , Toshio Tokune , Masahiro Ohta , Ryogo Kato , Toshiyuki Shima
IPC分类号： B01J23/89
CPC分类号： B01J23/8906 , B82Y30/00 , B82Y40/00 , C01B32/162
摘要： Provided is a substrate for carbon nanotube growth in which no metal particles as a catalyst aggregates and a method for manufacturing the substrate. A substrate for carbon nanotube growth 1 includes a base plate 2, a noble metal alloy catalyst 3 having an alloy of a noble metal and a transition metal, and a form-defining material layer 4 which allows the noble metal alloy catalyst 3 to be dispersed and arranged. A method for manufacturing a substrate for carbon nanotube growth 1 includes a step of sputtering a noble metal alloy on a base plate 2, a step of sputtering a form-defining material on the base plate 2, and a step of further sputtering the noble metal alloy on the form-defining material.
摘要翻译： 本发明提供一种碳纳米管生长用基材，其中不含作为催化剂的金属颗粒聚集体及其制造方法。 用于碳纳米管生长的衬底1包括基板2，具有贵金属和过渡金属的合金的贵金属合金催化剂3和允许贵金属合金催化剂3分散的形式限定材料层4 并安排。 制造碳纳米管生长用基板1的方法包括在基板2上溅射贵金属合金的步骤，在基板2上溅射形成界定材料的步骤，以及进一步溅射贵金属 合金在形式定义材料上。
-
2.发明授权公开(公告)号：US09056312B2
公开(公告)日：2015-06-16
申请号：US14095426
申请日：2013-12-03
发明人： Toshiyuki Ohashi , Toshio Tokune , Masahiro Ohta , Ryogo Kato , Toshiyuki Shima
IPC分类号： B01J21/00 , B01J21/04 , B01J23/00 , B01J23/02 , B01J23/40 , B01J23/42 , B01J23/44 , B01J23/58 , B01J23/70 , B01J23/74 , B01J23/89 , C01B31/02 , B82Y30/00 , B82Y40/00
CPC分类号： B01J23/8906 , B82Y30/00 , B82Y40/00 , C01B32/162
摘要： Provided is a substrate for carbon nanotube growth in which no metal particles as a catalyst aggregates and a method for manufacturing the substrate. A substrate for carbon nanotube growth 1 includes a base plate 2, a noble metal alloy catalyst 3 having an alloy of a noble metal and a transition metal, and a form-defining material layer 4 which allows the noble metal alloy catalyst 3 to be dispersed and arranged. A method for manufacturing a substrate for carbon nanotube growth 1 includes a step of sputtering a noble metal alloy on a base plate 2, a step of sputtering a form-defining material on the base plate 2, and a step of further sputtering the noble metal alloy on the form-defining material.
摘要翻译： 本发明提供一种碳纳米管生长用基材，其中不含作为催化剂的金属颗粒聚集体及其制造方法。 用于碳纳米管生长的衬底1包括基板2，具有贵金属和过渡金属的合金的贵金属合金催化剂3和允许贵金属合金催化剂3分散的形式限定材料层4 并安排。 制造碳纳米管生长用基板1的方法包括在基板2上溅射贵金属合金的步骤，在基板2上溅射形成界定材料的步骤，以及进一步溅射贵金属 合金在形式定义材料上。
-
公开(公告)号：US08815168B2
公开(公告)日：2014-08-26
申请号：US13791960
申请日：2013-03-09
发明人： Hiroshi Kawarada , Toshiyuki Ohashi , Masahiro Ohta , Ryogo Kato , Toshio Tokune , Hidefumi Nikawa
IPC分类号： B01J19/08 , C23C16/511
CPC分类号： B01J19/126 , B01J19/088 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01P2002/82
摘要： A carbon nanotube synthesizing apparatus in which the state of generated plasma can be stabilized is provided. A carbon nanotube synthesizing apparatus 1 comprises a chamber 2, an antenna 3 including a tip 3a, a microwave conductor 4, a gas introducing unit 5, a gas discharging unit 6, a substrate holding unit 7, and a heating unit 8. The shape of the inner wall of the chamber 2 is symmetrical with respect to the tip 3a of the antenna 3.
摘要翻译： 提供了一种碳纳管合成装置，其中产生的等离子体的状态能够稳定。 碳纳米管合成装置1包括室2，包括尖端3a的天线3，微波导体4，气体引入单元5，气体放电单元6，基板保持单元7和加热单元8。 室2的内壁相对于天线3的尖端3a对称。
-
4.发明申请公开(公告)号：US20140155251A1
公开(公告)日：2014-06-05
申请号：US14095447
申请日：2013-12-03
发明人： Toshiyuki Ohashi , Toshio Tokune , Masahiro Ohta , Ryogo Kato , Toshiyuki Shima
IPC分类号： B01J23/78
CPC分类号： B01J23/78 , B01J23/745 , B01J37/0244 , B01J37/342 , B82Y30/00 , B82Y40/00 , C23C14/081 , C23C14/18 , C23C14/5853 , C23C14/5893
摘要： Provided is a substrate for carbon nanotube growth in which no metal particles as a catalyst aggregates and a method for manufacturing the substrate. A substrate for carbon nanotube growth 1 includes a base plate 2, a catalyst 3, a form-defining material layer 4 which allows the catalyst 3 to be dispersed and arranged, and a covering layer 5 which has a metal oxide to cover the catalyst. A method for manufacturing a substrate for carbon nanotube growth 1 includes a step of sputtering on a base plate 2 a metal which forms a catalyst 3 and oxidizing the surface of the metal, a step of sputtering a form-defining material on the base plate 2, and a step of further sputtering on the form-defining material a metal which forms a catalyst 3 and oxidizing the surface of the metal.
摘要翻译： 本发明提供一种碳纳米管生长用基材，其中不含作为催化剂的金属颗粒聚集体及其制造方法。 用于碳纳米管生长的衬底1包括底板2，催化剂3，允许催化剂3分散和排列的形式限定材料层4和具有覆盖催化剂的金属氧化物的覆盖层5。 制造碳纳米管生长用基板1的方法包括在基板2上溅射形成催化剂3的金属，氧化金属表面的工序，在基板2上溅射形成限定材料的工序 以及在形成限定材料上进一步溅射形成催化剂3并氧化金属表面的金属的步骤。
-
5.发明授权公开(公告)号：US09289753B2
公开(公告)日：2016-03-22
申请号：US14095447
申请日：2013-12-03
发明人： Toshiyuki Ohashi , Toshio Tokune , Masahiro Ohta , Ryogo Kato , Toshiyuki Shima
IPC分类号： C23C14/34 , B01J23/78 , B01J37/02 , B01J37/34 , B01J23/745 , B82Y30/00 , B82Y40/00 , C23C14/08 , C23C14/18 , C23C14/58
CPC分类号： B01J23/78 , B01J23/745 , B01J37/0244 , B01J37/342 , B82Y30/00 , B82Y40/00 , C23C14/081 , C23C14/18 , C23C14/5853 , C23C14/5893
摘要： Provided is a substrate for carbon nanotube growth in which no metal particles as a catalyst aggregates and a method for manufacturing the substrate. A substrate for carbon nanotube growth 1 includes a base plate 2, a catalyst 3, a form-defining material layer 4 which allows the catalyst 3 to be dispersed and arranged, and a covering layer 5 which has a metal oxide to cover the catalyst. A method for manufacturing a substrate for carbon nanotube growth 1 includes a step of sputtering on a base plate 2 a metal which forms a catalyst 3 and oxidizing the surface of the metal, a step of sputtering a form-defining material on the base plate 2, and a step of further sputtering on the form-defining material a metal which forms a catalyst 3 and oxidizing the surface of the metal.
摘要翻译： 本发明提供一种碳纳米管生长用基材，其中不含作为催化剂的金属颗粒聚集体及其制造方法。 用于碳纳米管生长的衬底1包括底板2，催化剂3，允许催化剂3分散和排列的形式限定材料层4和具有覆盖催化剂的金属氧化物的覆盖层5。 制造碳纳米管生长用基板1的方法包括在基板2上溅射形成催化剂3的金属，氧化金属表面的工序，在基板2上溅射形成限定材料的工序 以及在形成限定材料上进一步溅射形成催化剂3并氧化金属表面的金属的步骤。
-
-
-
-
搜索结果
5 条记录 (耗时 0.014 秒)
