公开(公告)号：US20130235671A1

公开(公告)日：2013-09-12

申请号：US13605757

申请日：2012-09-06

Applicant: Hee Youl LEE

Inventor： Hee Youl LEE

IPC: G11C16/10

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/3427

Abstract: A semiconductor memory device and a method of operating a semiconductor memory device includes connecting selected even bit lines to selected even cell strings, programming memory cells in the selected even cell strings by using a second program permission voltage higher than a first program permission voltage, connecting selected odd bit lines to selected odd cell strings when programming of the memory cells is finished, and programming memory cells in the selected odd cell strings by using the first program permission voltage.

Abstract translation: 一种半导体存储器件和一种操作半导体存储器件的方法包括通过使用高于第一程序许可电压的第二程序许可电压将所选择的偶数位线连接到所选择的偶数单元串，编程所选择的偶数单元串中的存储器单元，连接 当对存储单元的编程完成时，选择的奇数位线到选定的奇数单元串，以及通过使用第一程序允许电压来编程所选奇数单元串中的存储单元。

公开(公告)号：US20100246268A1

公开(公告)日：2010-09-30

申请号：US12635226

申请日：2009-12-10

Applicant: Hee Youl LEE ,  Ki Seog Kim

Inventor： Hee Youl LEE ,  Ki Seog Kim

IPC: G11C16/10

CPC classification number: G11C16/0483 ,  G11C16/10

Abstract: In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines.

Abstract translation: 在非易失性存储器件的编程方法中，当执行程序时，将程序电压施加到为程序选择的第一字线。 将第一通过电压施加到与第一字线相邻的三个第二字线朝向源选择线。 第一和第二电压被施加到与第一字线相邻的第三和第四字线朝向源选择线。 对第一至第四字线以外的剩余字线施加第二通过电压。

公开(公告)号：US20080239828A1

公开(公告)日：2008-10-02

申请号：US11765531

申请日：2007-06-20

Applicant: Hee Youl LEE

Inventor： Hee Youl LEE

IPC: G11C16/00

CPC classification number: G11C16/16 ,  G11C16/0483 ,  G11C16/344 ,  G11C16/3445

Abstract: An erase operating time can be shortened and an erase operating characteristic can be improved in a flash memory device. The flash memory device includes a plurality of memory cell blocks, an operating voltage generator and a controller. Each of the plurality of memory cell blocks includes memory cells connected to a plurality of word lines. A voltage generator is configured to apply an erase voltage to a memory cell block selected for an erase operation, and change a level of the erase voltage if an attempt of the erase operation is not successful. A controller is configured to control the voltage generator to apply a first erase voltage to a memory cell block selected for an erase operation. The first erase voltage corresponds to a previous erase voltage that was used successfully in completing a previous erase operation. The first erase voltage is an erase voltage that is used in a first erase attempt for the erase operation.

Abstract translation: 可以缩短擦除操作时间并且可以在闪存设备中改善擦除操作特性。 闪存器件包括多个存储单元块，工作电压发生器和控制器。 多个存储单元块中的每一个包括连接到多个字线的存储单元。 电压发生器被配置为向擦除操作选择的存储单元块施加擦除电压，并且如果擦除操作尝试不成功则改变擦除电压的电平。 控制器被配置为控制电压发生器将第一擦除电压施加到为擦除操作选择的存储单元块。 第一擦除电压对应于在完成之前的擦除操作中成功使用的先前擦除电压。 第一擦除电压是在擦除操作的第一擦除尝试中使用的擦除电压。