公开(公告)号：US20110104618A1

公开(公告)日：2011-05-05

申请号：US12916993

申请日：2010-11-01

申请人： Nicholas P.T. Bateman ,  Helen L. Maynard ,  Benjamin B. Riordon ,  Christopher R. Hatem ,  Deepak Ramappa

发明人： Nicholas P.T. Bateman ,  Helen L. Maynard ,  Benjamin B. Riordon ,  Christopher R. Hatem ,  Deepak Ramappa

IPC分类号： G03F7/20 ,  C23C14/04

CPC分类号： H01L31/0682 ,  H01L21/266 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks.

摘要翻译： 使用利用非晶化和晶体硅之间的物理和化学性质差异的各种方法来产生可用于后续植入物的掩模。 在一些实施方案中，使用无定形和晶体硅之间的膜生长差异来产生掩模。 在其他实施例中，使用非晶硅和晶体硅之间的反射率或光吸收的差异来产生掩模。 在其他实施例中，掺杂和未掺杂硅的特性的差异被用于产生掩模。

公开(公告)号：US20100279479A1

公开(公告)日：2010-11-04

申请号：US12434364

申请日：2009-05-01

申请人： Christopher R. Hatem ,  Helen L. Maynard ,  Deepak A. Ramappa

发明人： Christopher R. Hatem ,  Helen L. Maynard ,  Deepak A. Ramappa

IPC分类号： H01L21/30

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26593 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/7848

摘要： A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing one or more cold-carbon or molecular carbon ion implantation steps to implant carbon ions within the semiconductor structure to create strain layers on either side of a channel region. Raised source/drain regions are then formed above the strain layers, and subsequent ion implantation steps are used to dope the raised source/drain region. A millisecond anneal step activates the strain layers and the raised source/drain regions. The strain layers enhances carrier mobility within a channel region of the semiconductor structure, while the raised source/drain regions minimize reduction in strain in the strain layer caused by subsequent implantation of dopant ions in the raised source/drain regions.

摘要翻译： 公开了一种用于增强半导体结构的沟道区域中的拉伸应力的方法。 该方法包括执行一个或多个冷碳或分子碳离子注入步骤以在半导体结构内注入碳离子，以在沟道区的任一侧产生应变层。 然后在应变层上方形成升高的源极/漏极区域，并且随后的离子注入步骤用于掺杂升高的源极/漏极区域。 毫秒退火步骤激活应变层和升高的源极/漏极区域。 应变层增强了半导体结构的沟道区域内的载流子迁移率，而凸起的源极/漏极区域最小化了由于在升高的源极/漏极区域中随后注入掺杂剂离子引起的应变层中的应变减小。