公开(公告)号：US08297458B2

公开(公告)日：2012-10-30

申请号：US12808698

申请日：2008-01-31

申请人： Katsuaki Sumimiya ,  Hiroshi Hamana

发明人： Katsuaki Sumimiya ,  Hiroshi Hamana

IPC分类号： B65D41/04 ,  B65D53/00 ,  B65D41/34

CPC分类号： B65D41/045

摘要： A cap includes a cap main body and a gasket, and the gasket includes an inner leg, a bent part, and a flange part. A portion of the gasket connected to an inner circumferential side of the inner leg is positioned lower than a portion of the gasket connected to an outer circumferential side of the inner leg. The top plate of the gasket includes a flange part disposed between the inner leg and the bent part, and the flange part is thinner than a portion of the top plate that is contiguous with the inner circumferential side of the inner leg.

摘要翻译： 盖包括盖主体和垫圈，垫片包括内腿，弯曲部和凸缘部。 连接到内腿的内周侧的垫圈的一部分定位成比连接到内腿的外周侧的垫圈的部分低。 垫圈的顶板包括设置在内腿和弯曲部之间的凸缘部，并且凸缘部比与内腿的内周侧邻接的顶板的部分薄。

公开(公告)号：US20120094468A1

公开(公告)日：2012-04-19

申请号：US13182671

申请日：2011-07-14

申请人： Sidharth Bhatia ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman

发明人： Sidharth Bhatia ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman

IPC分类号： H01L21/762 ,  B82Y40/00

CPC分类号： H01L21/76224 ,  B82Y10/00 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271

摘要： Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 本公开的方面涉及在衬底上沉积氧化硅层的方法。 在实施例中，通过将具有Si-O键的含硅前体，含氧前体和具有Si-C键和Si-N键的第二含硅前体流过，沉积氧化硅层， 半导体处理室以形成保形衬里层。 在衬里层完成时，通过将具有Si-O键的含硅前体，含氧前体流入半导体处理室来形成间隙填充层。 保形衬垫层的存在提高了间隙填充层更平稳地生长，填充沟槽并且在氧化硅填料材料内产生减少量和/或尺寸的空隙的能力。

公开(公告)号：US20110250731A1

公开(公告)日：2011-10-13

申请号：US13052238

申请日：2011-03-21

申请人： Sasha Kweskin ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kadar Sapre

发明人： Sasha Kweskin ,  Hiroshi Hamana ,  Paul Edward Gee ,  Shankar Venkataraman ,  Kadar Sapre

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/67017

摘要： Aspects of the disclosure pertain to methods of preferentially filling narrow trenches with silicon oxide while not completely filling wider trenches and/or open areas. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively dense first portion of a silicon oxide layer followed by a more porous (and more rapidly etched) second portion of the silicon oxide layer. Narrow trenches are filled with dense material whereas open areas are covered with a layer of dense material and more porous material. Dielectric material in wider trenches may be removed at this point with a wet etch while the dense material in narrow trenches is retained.

摘要翻译： 本公开的方面涉及优先用氧化硅填充窄沟槽而不完全填充较宽的沟槽和/或开放区域的方法。 在实施例中，通过使含硅前体和臭氧流入处理室来沉积电介质层，使得氧化硅层的相对致密的第一部分，随后是氧化硅层的更多孔（并且更快蚀刻）的第二部分 。 狭窄的沟槽填充有致密的材料，而开放区域被一层致密材料和更多孔的材料覆盖。 在较宽的沟槽中的电介质材料可以在这一点用湿法蚀刻去除，而狭窄沟槽中的致密材料被保留。

公开(公告)号：US20100276387A1

公开(公告)日：2010-11-04

申请号：US12746562

申请日：2008-09-26

申请人： Hiroshi Hamana ,  Atsushi Miyagi

发明人： Hiroshi Hamana ,  Atsushi Miyagi

IPC分类号： B65D41/34

CPC分类号： B65D41/3428 ,  B65D41/0421

摘要： The present invention provides a synthetic resin cap capable of providing excellent tamper evidence performance, achieving both sealing performance and opening performance, and securing leak prevention of contents in the container before breakage of the bridges.The present invention includes a top wall, a skirt wall, and a tamper evidence band connected to the skirt wall with bridges interposed therebetween, wherein an inner face of the top wall is provided with an annular inner leg, an annular projection, and an annular outer leg, which are integrally formed, and in the inner leg, a thickness of a transverse section of the intermediate part is substantially constant in a vertical direction, an inner circumferential face and an outer circumferential face of the intermediate part are curved faces that have substantially the same curvature of longitudinal section and are arcuate that are convex inwardly in a radial direction, and an outer circumferential face of a distal end part of the inner leg is provided with a guide face that guides the container mouth part, and the intermediate part is inclined outwardly in the radial direction so that an upper end of the guide face is shifted inwardly in radial direction by 0.1 to 0.6 mm when the inner leg is inserted in the container mouth part.

摘要翻译： 本发明提供一种合成树脂盖，其能够提供优异的防篡改证明性能，实现密封性能和开口性能，并且在桥梁断裂之前确保容器内容物的泄漏防止。 本发明包括顶壁，裙壁和连接到裙壁的篡改证据带，其中插入有桥，其中顶壁的内表面设置有环形内腿，环形突起和环形 外腿，其一体形成，在内腿中，中间部的横截面的厚度在垂直方向上基本恒定，中间部的内周面和外周面是具有 基本上相同的纵截面曲率并且在径向方向上向内凸出的弧形，并且内腿的远端部分的外周面设置有引导容器口部的引导面，并且中间部 在径向方向上向外倾斜，使得当内部l的引导面的上端沿径向向内偏移0.1至0.6mm时 例如插入容器口部。