公开(公告)号：US20130018052A1

公开(公告)日：2013-01-17

申请号：US13548785

申请日：2012-07-13

Applicant: Ju Young LEE ,  Keun-Ho RYU ,  Jae-Sun KIM ,  Yong-Hyuk KIM ,  Dong Chul SHIN ,  Bong-yong LEE ,  Sang-hwan KANG ,  Hyun-Jung LEE ,  Hoechul JUNG ,  Young Ah SHIN ,  Euisun PARK ,  Jaeseung AHN

Inventor： Ju Young LEE ,  Keun-Ho RYU ,  Jae-Sun KIM ,  Yong-Hyuk KIM ,  Dong Chul SHIN ,  Bong-yong LEE ,  Sang-hwan KANG ,  Hyun-Jung LEE ,  Hoechul JUNG ,  Young Ah SHIN ,  Euisun PARK ,  Jaeseung AHN

IPC: A61K31/444 ,  A61K31/498 ,  A61K31/519 ,  A61K31/4709 ,  C07D495/04 ,  A61K31/4439 ,  C07D498/04 ,  A61P13/12 ,  A61P1/16 ,  A61P11/00 ,  A61P9/04 ,  A61P9/00 ,  A61P27/02 ,  A61P9/10 ,  A61P17/02 ,  A61P19/02 ,  A61P19/10 ,  A61P25/00 ,  A61P15/00 ,  A61P17/00 ,  A61P25/28 ,  A61P7/02 ,  A61P35/00 ,  A61P35/04 ,  C07D487/04

CPC classification number: C07D487/04 ,  C07D519/00

Abstract: The present invention provides a novel 2-pyridyl substituted imidazole derivative, or a pharmaceutically acceptable salt or solvate thereof, which selectively inhibits the transforming growth factor-β (TGF-β) type I receptor (ALK5) and/or the activin type I receptor (ALK4); a pharmaceutical composition comprising same as an active ingredient; and a use of the 2-pyridyl substituted imidazole derivative for the manufacture of a medicament for preventing or treating a disease mediated by ALK5 and/or ALK4 receptors in a mammal.

Abstract translation: 本发明提供了选择性抑制转化生长因子-β1的新型2-吡啶基取代咪唑衍生物或其药学上可接受的盐或溶剂合物。 （TGF-β）I型受体（ALK5）和/或激活素I型受体（ALK4）; 包含其作为活性成分的药物组合物; 以及2-吡啶基取代的咪唑衍生物在制备用于预防或治疗由哺乳动物中ALK5和/或ALK4受体介导的疾病的药物中的用途。

公开(公告)号：US20120217493A1

公开(公告)日：2012-08-30

申请号：US13365704

申请日：2012-02-03

Applicant: Jin-Won LEE ,  Woo Geun LEE ,  Kap Soo YOON ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Hee-Jun BYEON ,  Ji-Soo OH

Inventor： Jin-Won LEE ,  Woo Geun LEE ,  Kap Soo YOON ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Hee-Jun BYEON ,  Ji-Soo OH

IPC: H01L29/786 ,  H01L33/02 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/41733

Abstract: A thin film transistor array panel includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a first electrode and an oxide semiconductor disposed directly on the gate insulating layer; a source electrode and a drain electrode formed on the oxide semiconductor; a passivation layer disposed on the first electrode, the source electrode, and the drain electrode; and a second electrode disposed on the passivation layer.

Abstract translation: 薄膜晶体管阵列面板包括：设置在绝缘基板上的栅电极; 设置在栅电极上的栅极绝缘层; 直接设置在栅极绝缘层上的第一电极和氧化物半导体; 形成在所述氧化物半导体上的源电极和漏电极; 设置在所述第一电极，所述源电极和所述漏电极上的钝化层; 以及设置在钝化层上的第二电极。