公开(公告)号：US20230178643A1

公开(公告)日：2023-06-08

申请号：US17561633

申请日：2021-12-23

Applicant: Industrial Technology Research Institute

Inventor： Shih-Chin Lin ,  Ching-Chiun Wang ,  Jwu-Sheng Hu ,  Yi Chang ,  Yi-Jiun Lin

IPC: H01L29/778 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7785 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205

Abstract: A high electron mobility transistor (HEMT) device includes at least an AlN nucleation layer, a superlattice composite layer, a GaN electron transport layer, and an AlGaN barrier layer. The superlattice composite layer is disposed on the AlN nucleation layer, and the superlattice composite layer includes a plurality of AlN films and a plurality of GaN films stacked alternately to reduce device stress. The GaN electron transport layer is disposed on the superlattice composite layer, and the AlGaN barrier layer is disposed on the GaN electron transport layer.

公开(公告)号：US11961716B2

公开(公告)日：2024-04-16

申请号：US17546053

申请日：2021-12-09

Applicant: Industrial Technology Research Institute

Inventor： Hsuan-Fu Wang ,  Fu-Ching Tung ,  Ching-Chiun Wang

IPC: C23C16/455 ,  H01J37/32

CPC classification number: H01J37/3244 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45565 ,  H01J37/32899 ,  H01J37/32082 ,  H01J2237/332

Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

公开(公告)号：US20230187177A1

公开(公告)日：2023-06-15

申请号：US17546053

申请日：2021-12-09

Applicant: Industrial Technology Research Institute

Inventor： Hsuan-Fu Wang ,  Fu-Ching Tung ,  Ching-Chiun Wang

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/3244 ,  H01J37/32899 ,  C23C16/45565 ,  C23C16/45548 ,  C23C16/45536 ,  H01J37/32082 ,  H01J2237/332

Abstract: A deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off. A deposition method is also provided.

公开(公告)号：US20220119943A1

公开(公告)日：2022-04-21

申请号：US17117111

申请日：2020-12-10

Applicant: Industrial Technology Research Institute

Inventor： Kuan-Chou Chen ,  Ching-Chiun Wang ,  Chih-Yung Huang ,  Muh-Wang Liang ,  Yi-Jiun Lin

IPC: C23C16/455 ,  C23C16/46

Abstract: A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

公开(公告)号：US20200154555A1

公开(公告)日：2020-05-14

申请号：US16223044

申请日：2018-12-17

Applicant: Industrial Technology Research Institute

Inventor： Chih-Yung Huang ,  Kuan-Chou Chen ,  Shih-Chin Lin ,  Yi-Jiun Lin ,  Ching-Chiun Wang

IPC: H05H1/00 ,  H05H1/24 ,  H04N5/247 ,  G06T7/246

Abstract: A flow field visualization device includes a chamber, a power supply, at least one pair of electrodes, and at least two high-speed cameras. The power supply outputs a voltage for plasma generation, and the pair of electrodes is disposed in the chamber. The pair of electrodes includes a first electrode and a second electrode. The first electrode has a plurality of first tips, the second electrode has a plurality of second tips, and the first tips and the second tips are aligned with each other. The pair of electrodes generates a periodically densely distributed plasma by exciting a gas in the chamber through the voltage from the power supply. The high-speed cameras are disposed outside the chamber and are positioned in different directions corresponding to the pair of electrodes in order to capture images of different dimensions.