公开(公告)号：US20240363314A1

公开(公告)日：2024-10-31

申请号：US18647944

申请日：2024-04-26

Applicant: SK enpulse Co., Ltd.

Inventor： Jong Kyu LEE ,  Hyun Soo LEE ,  Il Gu YONG ,  Do Hyun CHOI ,  Ho Geun HAN

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  C23C16/45565

Abstract: An embodiment of the present disclosure provides an upper electrode including a flat upper surface; a lower surface facing the upper surface; and a thickness from the upper surface to the lower surface, wherein the lower surface includes a first profile corresponding to the central area of the lower surface and having a first thickness change rate of −0.1 to 0; a third profile surrounding the first profile and having a third thickness change rate of −0.115 to −0.122; and a fifth profile surrounding the third profile and having a fifth thickness change rate of −0.003 to 0.003, wherein the first thickness change rate, the third thickness change rate, and the fifth thickness change rate are values obtained by dividing a change in thickness by a change in radius along a horizontal direction parallel to the upper surface from a center of the lower surface.

公开(公告)号：US12116669B2

公开(公告)日：2024-10-15

申请号：US17322324

申请日：2021-05-17

Applicant: Lam Research Corporation

Inventor： Rachel Batzer ,  Zhe Gui ,  Galbokka Hewage Layan Savithra

IPC: C23C16/40 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45565 ,  H01J37/32743 ,  H01J2237/332 ,  H01J2237/334

Abstract: A showerhead for a substrate processing system includes a lower surface, a plasma-facing upper surface, a gas plenum defined between the lower surface and the upper surface, and a plurality of injectors distributed on the lower surface, wherein the plurality of injectors are in fluid communication with the gas plenum. A plurality of through holes extends from the upper surface to the lower surface. Selected ones of the plurality of through holes have a diameter that is different from a diameter of remaining ones of the plurality of through holes. The diameter of the selected ones of the plurality of through holes is predetermined in accordance with a desired ratio of respective gases provided via the selected ones of the plurality of through holes and the remaining ones of the plurality of through holes.

公开(公告)号：US20240318313A1

公开(公告)日：2024-09-26

申请号：US18608937

申请日：2024-03-19

Applicant: TES CO., LTD

Inventor： Dae-Geun YOON

IPC: C23C16/455

CPC classification number: C23C16/45591 ,  C23C16/45565

Abstract: Provided is a gas baffle, more particularly, a gas baffle for effectively dispersing gas before supplying gas to a substrate through a showerhead in a substrate processing apparatus.

公开(公告)号：US20240263311A1

公开(公告)日：2024-08-08

申请号：US18432288

申请日：2024-02-05

Applicant: TES Co., Ltd

Inventor： Seong-Pyo CHO ,  Seung-Hwan JEON ,  Nam-Seo KIM

IPC: C23C16/50 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/50 ,  C23C16/26 ,  C23C16/4408 ,  C23C16/45565 ,  C23C16/52

Abstract: Disclosed is a method for depositing an amorphous carbon film, the method including: (a) loading a substrate into a process chamber; (b) vacuumizing an inner space of the process chamber; and (c) converting hydrocarbon gas into plasma in the process chamber to deposit an amorphous carbon film on the substrate, wherein in the step (c), an oxygen-containing source is converted into plasma to dope oxygen into the deposited amorphous carbon film.

公开(公告)号：US20240263304A1

公开(公告)日：2024-08-08

申请号：US18638154

申请日：2024-04-17

Applicant: ASM IP Holding B.V.

Inventor： Seung Wook Kim ,  Ju Ill Lee ,  Won Ki Jeong ,  Dong Rak Jung ,  Hong Hyun Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  H01J37/32522 ,  C23C16/45551 ,  C23C16/4586 ,  H01J37/32082

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

公开(公告)号：US20240218509A1

公开(公告)日：2024-07-04

申请号：US18427691

申请日：2024-01-30

Applicant: Lam Research Corporation

Inventor： Bhadri N. VARADARAJAN ,  Bo GONG ,  Rachel E. BATZER ,  Huatan QIU ,  Bart J. VAN SCHRAVENDIJK ,  Geoffrey HOHN

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/458 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US20240200190A1

公开(公告)日：2024-06-20

申请号：US18381006

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Wee Kong ,  Taewon Lee ,  Sangho Roh ,  SongYi Baek

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45565 ,  H01J37/3244 ,  H01J37/32091 ,  H01J2237/3321

Abstract: A shower head may include a lower shower head part including a lower plate. The lower plate includes a lower plate, the lower plate includes a plurality of gas holes, the plurality of gas holes includes: a vertical hole vertically penetrating the lower plate in a first direction; and an inclined hole penetrating the lower plate in a second direction, which is inclined at an acute angle with respect to the first direction of the vertical hole, the vertical hole has a first diameter and the inclined hole has a second diameter which is different than the first diameter.

公开(公告)号：US11996270B2

公开(公告)日：2024-05-28

申请号：US17401443

申请日：2021-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunhee Jeang ,  Seongkeun Cho ,  Kyungrim Kim ,  Incheol Song ,  Jangwon Cho

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/67

CPC classification number: H01J37/32238 ,  H01J37/32229 ,  H01J37/32669 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/3266 ,  H01L21/67069

Abstract: A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

公开(公告)号：US11993843B2

公开(公告)日：2024-05-28

申请号：US16039817

申请日：2018-07-19

Applicant: ASM IP Holding B.V.

Inventor： Seung Wook Kim ,  JuIll Lee ,  Won Ki Jeong ,  Dong Rak Jung ,  Hong Hyun Kim

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  H01J37/32522 ,  C23C16/45551 ,  C23C16/4586 ,  H01J37/32082

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

公开(公告)号：US11981987B2

公开(公告)日：2024-05-14

申请号：US17510529

申请日：2021-10-26

Applicant: Universal Display Corporation

Inventor： Edwin van den Tillaart ,  Sven Pekelder ,  Mark Meuwese ,  William E. Quinn ,  Gregory McGraw ,  Gregg Kottas

IPC: C23C14/24 ,  C23C14/12 ,  C23C16/455 ,  C23C16/54 ,  H10K71/13 ,  H10K85/30

CPC classification number: C23C14/24 ,  C23C14/12 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/545 ,  H10K71/135 ,  H10K85/342

Abstract: A deposition nozzle is provided that includes offset deposition apertures disposed between exhaust apertures on either side of the deposition apertures. The provided nozzle arrangements allow for deposition of material with a deposition profile suitable for use in devices such as OLEDs.