公开(公告)号：US09236136B2

公开(公告)日：2016-01-12

申请号：US13714763

申请日：2012-12-14

Applicant: Intel Corporation

Inventor： Robert E. Frickey ,  Yogesh B. Wakchaure ,  Iwen Chao ,  Xin Guo ,  Kristopher H. Gaewsky

IPC: G06F12/02 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C11/5642 ,  G06F12/0246 ,  G06F2212/1032 ,  G11C11/5628 ,  G11C16/3404 ,  G11C16/3418 ,  G11C2211/5641 ,  G11C2211/5646

Abstract: An electronic memory or controller may use a first type of read command, addressed to a first page of memory of an electronic memory that includes information to indicate that a second page of memory of the electronic memory has not been programmed and a second type of read command, addressed to the first page of memory, that includes information to indicate that the second page of memory has been programmed. The first page of memory may include a lower page of a multi-level cell (MLC), and the second page of memory may include an upper page of the same MLC. The second page of memory is enabled during a period of time that the first type of read command is used.

Abstract translation: 电子存储器或控制器可以使用第一类型的读取命令，寻址到电子存储器的存储器的第一页，其包括用于指示电子存储器的第二页存储器尚未被编程的信息和第二类型的读取 命令，寻址到存储器的第一页，其包括用于指示第二页存储器已被编程的信息。 存储器的第一页可以包括多级单元（MLC）的下页，并且第二页存储器可以包括相同MLC的上页。 在使用第一种类型的读取命令的时间段内启用第二页内存。