公开(公告)号：US20140239398A1

公开(公告)日：2014-08-28

申请号：US13968169

申请日：2013-08-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： KANGGUO CHENG ,  BRUCE B. DORIS ,  POUYA HASHEMI ,  ALI KHAKIFIROOZ

IPC: H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/02494 ,  H01L21/02587 ,  H01L29/7853

Abstract: A method for forming a U-shaped semiconductor device includes forming trenches in a crystalline layer and epitaxially growing a U-shaped semiconductor material along sidewalls and bottoms of the trenches. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. The U-shaped semiconductor material is supported by backfilling underneath the U-shaped semiconductor material with a dielectric material. A semiconductor device is formed with the U-shaped semiconductor material.