公开(公告)号：US20170170207A1

公开(公告)日：2017-06-15

申请号：US15209780

申请日：2016-07-14

Applicant: Industrial Technology Research Institute

Inventor： Tai-Jui Wang ,  Tsu-Chiang Chang ,  Yu-Hua Chung ,  Wei-Han Chen ,  Hsiao-Chiang Yao

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78603 ,  H01L29/78675

Abstract: A semiconductor device is provided to include a flexible substrate, a barrier layer, a heat insulating layer, a device layer, a dielectric material later and a stress absorbing layer. The barrier layer is disposed on the flexible substrate. The heat insulating layer is disposed on the barrier layer, wherein the heat insulating layer has a thermal conductivity of less than 20 W/mK. The device layer is disposed on the heat insulating layer. The dielectric material layer is disposed on the device layer, and the dielectric material layer and the heat insulating layer include at least one trench. The stress absorbing layer is disposed on the dielectric material layer, and the stress absorbing layer fills into the at least one trench.