公开(公告)号：US20140091384A1

公开(公告)日：2014-04-03

申请号：US13631924

申请日：2012-09-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Luca Petruzzi ,  Bernhard Auer ,  Paolo Del Croce ,  Markus Ladurner

IPC: H01L29/78

CPC classification number: H01L27/0922 ,  H01L27/0248 ,  H01L29/42368 ,  H01L29/7813 ,  H01L2924/0002 ,  H03K17/08142 ,  H01L2924/00

Abstract: A semiconductor device is disclosed. In accordance with a first aspect of the present invention the device includes a semiconductor chip having a substrate, a first supply terminal electrically coupled to the substrate to provide a first supply potential (VS) and a load current to the substrate, and a second supply terminal operably provided with a second supply potential. A first vertical transistor is integrated in the semiconductor chip and electrically coupled between the supply terminal and an output terminal. The first vertical transistor is configured to provide a current path for the load current to the output terminal in accordance with a control signal, which is provided to a gate electrode of the first vertical transistor.

Abstract translation: 公开了一种半导体器件。 根据本发明的第一方面，该器件包括具有衬底的半导体芯片，与衬底电耦合以提供第一电源电位（VS）和向衬底提供负载电流的第一电源端子，以及第二电源 端子可操作地设置有第二电源电位。 第一垂直晶体管集成在半导体芯片中并电耦合在电源端子和输出端子之间。 第一垂直晶体管被配置为根据提供给第一垂直晶体管的栅电极的控制信号为输出端提供负载电流的电流路径。