公开(公告)号：US20150357322A1

公开(公告)日：2015-12-10

申请号：US14831024

申请日：2015-08-20

Applicant: Infineon Technologies AG

Inventor： Cornelius Christian Russ ,  David Alvarez

IPC: H01L27/02 ,  H01L29/04 ,  H01L29/417 ,  H01L29/16 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/0255 ,  H01L21/8234 ,  H01L27/0274 ,  H01L27/0629 ,  H01L29/04 ,  H01L29/16 ,  H01L29/41725 ,  H01L29/66136 ,  H01L29/66568

Abstract: An ESD protection device includes an MOS transistor with a source region, drain region and gate region. A node designated for ESD protection is electrically coupled to the drain. A diode is coupled between the gate and source, wherein the diode would be reverse biased if the MOS transistor were in the active operating region.

Abstract translation: ESD保护器件包括具有源极区，漏极区和栅极区的MOS晶体管。 指定用于ESD保护的节点电耦合到漏极。 二极管耦合在栅极和源极之间，其中如果MOS晶体管处于有源工作区域，二极管将被反向偏置。