公开(公告)号：US20240332365A1

公开(公告)日：2024-10-03

申请号：US18614485

申请日：2024-03-22

申请人： STMicroelectronics International N.V.

发明人： Björn MAGNUSSON LINDGREN ,  Carlo RIVA

IPC分类号： H01L29/16 ,  C30B28/14 ,  C30B29/36 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L29/1608 ,  C30B28/14 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/0262 ,  H01L29/04

摘要： Various embodiments of wafers include a polycrystalline silicon carbide (SiC) layer or base substrate. The polycrystalline silicon carbide (SiC) layer may have a resistivity less than or equal to 2 mohm-cm (milliohm-centimeter) such that the polycrystalline silicon carbide layer is a low resistivity polycrystalline silicon carbide layer. The polycrystalline silicon carbide layer may have grains with a grain size less than or equal to 1 millimeter (mm), and may have a non-columnar structure. The polycrystalline silicon carbide layer may have a warpage less than or equal to 75 μm (micrometers). A monocrystalline silicon carbide (SiC) layer may be coupled to the polycrystalline silicon carbide (SiC) layer by a bonding layer. The monocrystalline silicon carbide layer may be thinner than the polycrystalline silicon carbide layer.

公开(公告)号：US20240304699A1

公开(公告)日：2024-09-12

申请号：US18591799

申请日：2024-02-29

申请人： Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

发明人： Junyoung KWON ,  Gwanhyung LEE ,  Heeje RYU

IPC分类号： H01L29/49 ,  H01L29/04 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/408 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78648

摘要： A semiconductor device includes a semiconductor layer including a two-dimensional semiconductor material, a source electrode and a drain electrode electrically connected to respective edge regions on the semiconductor layer, an insulating layer arranged on the semiconductor layer, and a gate electrode arranged on the insulating layer, wherein the insulating layer may include a single-crystal layer.

公开(公告)号：US12074213B2

公开(公告)日：2024-08-27

申请号：US17357697

申请日：2021-06-24

申请人： The Board of Trustees of the University of Illinois

发明人： Ralph G. Nuzzo ,  John A. Rogers ,  Etienne Menard ,  Keon Jae Lee ,  Dahl-Young Khang ,  Yugang Sun ,  Matthew Meitl ,  Zhengtao Zhu

IPC分类号： H01L29/76 ,  B82Y10/00 ,  H01L21/02 ,  H01L21/308 ,  H01L21/322 ,  H01L21/683 ,  H01L23/00 ,  H01L23/02 ,  H01L25/075 ,  H01L27/12 ,  H01L29/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/786 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L29/76 ,  B82Y10/00 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02628 ,  H01L21/308 ,  H01L21/322 ,  H01L21/6835 ,  H01L23/02 ,  H01L24/03 ,  H01L24/80 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0753 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03926 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1896 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/32 ,  B81C2201/0185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/03 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03614 ,  H01L2224/0362 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/80 ,  H01L2224/80006 ,  H01L2224/80121 ,  H01L2224/80862 ,  H01L2224/80895 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15159 ,  H01L2924/15162 ,  H01L2924/15788 ,  H01L2924/1579 ,  Y02E10/547 ,  Y02P70/50 ,  Y10S977/707 ,  Y10S977/724 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/0332 ,  H01L2924/00014 ,  H01L2224/97 ,  H01L2224/80 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/80121 ,  H01L2924/00012 ,  H01L2224/83121 ,  H01L2924/00012 ,  H01L2224/9202 ,  H01L2224/03 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/2919 ,  H01L2924/0665 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/01032 ,  H01L2224/05082 ,  H01L2224/05644 ,  H01L2224/05155 ,  H01L2224/05144 ,  H01L2924/01032 ,  H01L2224/05073 ,  H01L2224/05644 ,  H01L2224/05166 ,  H01L2224/05166 ,  H01L2924/00014 ,  H01L2224/05555 ,  H01L2924/00014 ,  H01L2224/05554 ,  H01L2924/00014 ,  H01L2224/05553 ,  H01L2924/00014 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/83192 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/00 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/1305 ,  H01L2924/00 ,  H01L2924/12032 ,  H01L2924/00 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/12036 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/12043 ,  H01L2924/00 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2924/13063 ,  H01L2924/00 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/13055 ,  H01L2924/00

摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

公开(公告)号：US12068161B1

公开(公告)日：2024-08-20

申请号：US18045071

申请日：2022-10-07

申请人： POWER INTEGRATIONS, INC.

发明人： James R. Shealy ,  Richard J. Brown

IPC分类号： H01L21/00 ,  H01L21/265 ,  H01L29/04 ,  H01L29/66

CPC分类号： H01L21/26553 ,  H01L29/04 ,  H01L29/66204

摘要： In an example, the present invention provides a method of forming a semiconductor device on a gallium and nitrogen containing material. The method includes providing a substrate member comprising a surface region, the substrate member comprising a gallium and nitrogen bearing material. The method includes causing an implanted species to electrically activate the implant profile while removing one or more crystalline damage from the epitaxial material to change the amorphous state to a single crystalline state, and thereby creating a substantially electrically activated crystalline material.

公开(公告)号：US20240268109A1

公开(公告)日：2024-08-08

申请号：US18638859

申请日：2024-04-18

申请人： KIOXIA CORPORATION

发明人： Yusuke SHIMA

IPC分类号： H10B41/27 ,  G11C5/02 ,  G11C5/06 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/67 ,  H01L21/768 ,  H01L29/04 ,  H10B43/27

CPC分类号： H10B41/27 ,  G11C5/025 ,  G11C5/06 ,  H01L21/3065 ,  H01L21/31053 ,  H01L21/67075 ,  H01L21/76876 ,  H01L29/04 ,  H10B43/27

摘要： A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality of first films different from the first conductive layers disposed in same layers as the plurality of first conductive layers in the second region and a plurality of second films different from the second conductive layers and the first films disposed in same layers as the plurality of second conductive layers in the second region.

公开(公告)号：US20240266443A1

公开(公告)日：2024-08-08

申请号：US18612525

申请日：2024-03-21

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

CPC分类号： H01L29/7869 ,  H01L29/04 ,  H01L29/423 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78648 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/1225 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

摘要： A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US12057451B2

公开(公告)日：2024-08-06

申请号：US17845112

申请日：2022-06-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Wataru Uesugi ,  Hikaru Tamura ,  Atsuo Isobe

IPC分类号： G11C7/06 ,  G11C7/04 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786 ,  H01L49/02 ,  H03K19/00 ,  H03K19/0185

CPC分类号： H01L27/1207 ,  G11C7/04 ,  H01L27/1225 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7849 ,  H01L29/78648 ,  H01L29/78696 ,  H03K19/0008 ,  H03K19/018514

摘要： A retention circuit provided in a logic circuit enables power gating. The retention circuit includes a first terminal, a node, a capacitor, and first to third transistors. The first transistor controls electrical connection between the first terminal and an input terminal of the logic circuit. The second transistor controls electrical connection between an output terminal of the logic circuit and the node. The third transistor controls electrical connection between the node and the input terminal of the logic circuit. A gate of the first transistor is electrically connected to a gate of the second transistor. In a data retention period, the node becomes electrically floating. The voltage of the node is held by the capacitor.

公开(公告)号：US12051750B2

公开(公告)日：2024-07-30

申请号：US17884285

申请日：2022-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Chieh Lu ,  Sai-Hooi Yeong ,  Bo-Feng Young ,  Yu-Ming Lin ,  Chih-Yu Chang

IPC分类号： H01L29/78 ,  G11C11/22 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10B51/10 ,  H10B51/20 ,  H10B51/30

CPC分类号： H01L29/78391 ,  G11C11/223 ,  G11C11/2255 ,  G11C11/2257 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H10B51/10 ,  H10B51/20 ,  H10B51/30

摘要： A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.

公开(公告)号：US12027576B2

公开(公告)日：2024-07-02

申请号：US17820304

申请日：2022-08-17

申请人： Mitsubishi Electric Corporation

发明人： Tomoaki Noguchi

IPC分类号： H01L21/66 ,  H01L29/04 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/04 ,  H01L22/12 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide semiconductor device includes: a silicon carbide layer of a first conductive type including a defect region in which a crystal defect exists; a plurality of well regions of a second conductive type formed on the silicon carbide layer; source regions of the first conductive type formed in the well regions; gate oxide films formed on the silicon carbide layer, the well regions and the source regions; gate electrodes formed on the gate oxide films; and a source electrode electrically connected to the well regions and the source regions, wherein the source region is not formed in the defect region.

公开(公告)号：US20240213340A1

公开(公告)日：2024-06-27

申请号：US18599779

申请日：2024-03-08

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Shahaji B. MORE ,  Cheng-Han LEE

IPC分类号： H01L29/417 ,  H01L21/8234 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/41791 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L29/04 ,  H01L29/66795 ,  H01L29/785

摘要： The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a gate structure over the substrate, and a source/drain (S/D) region adjacent to the gate structure. The S/D region can include first and second side surfaces separated from each other. The S/D region can further include top and bottom surfaces between the first and second side surfaces. A first separation between the top and bottom surfaces can be greater than a second separation between the first and second side surfaces.