公开(公告)号：US20150115353A1

公开(公告)日：2015-04-30

申请号：US14525398

申请日：2014-10-28

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Andrew Christopher Graeme Wood

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0634 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815

Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.

Abstract translation: 提供的场效应部件包括半导体本体，该半导体本体从边缘区域延伸到从顶侧到侧面的后侧，并且包括半导体台面，该半导体台面垂直于后侧 和/或顶侧。 所述半导体本体在垂直截面中还包括漂移区域，所述漂移区域至少在所述边缘区域中至少延伸至所述顶侧并且部分地布置在所述半导体台面中，所述体区域至少部分地布置在 半导体台面并且与漂移区域形成pn结。 pn结在半导体台面的两个侧壁之间延伸。