公开(公告)号：US09391192B2

公开(公告)日：2016-07-12

申请号：US14525398

申请日：2014-10-28

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Andrew Christopher Graeme Wood

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/739 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/0634 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815

Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.

Abstract translation: 提供的场效应部件包括半导体本体，该半导体本体从边缘区域延伸到从顶侧到侧面的后侧，并且包括半导体台面，该半导体台面垂直于后侧 和/或顶侧。 所述半导体本体在垂直截面中还包括漂移区域，所述漂移区域至少在所述边缘区域中至少延伸至所述顶侧并且部分地布置在所述半导体台面中，所述体区域至少部分地布置在 半导体台面并且与漂移区域形成pn结。 pn结在半导体台面的两个侧壁之间延伸。

公开(公告)号：US10453915B2

公开(公告)日：2019-10-22

申请号：US15941637

申请日：2018-03-30

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Karl-Heinz Bach ,  Christian Kampen ,  Dietmar Kotz ,  Andrew Christopher Graeme Wood ,  Markus Zundel

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L29/78 ,  H01L29/66 ,  H01L21/266 ,  H01L29/36 ,  H01L21/265

Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.

公开(公告)号：US10593799B2

公开(公告)日：2020-03-17

申请号：US16100496

申请日：2018-08-10

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Peter Brandl ,  Andrew Christopher Graeme Wood

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L21/225 ,  H01L21/266 ,  H01L29/40 ,  H01L21/265

Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.

公开(公告)号：US20160284795A1

公开(公告)日：2016-09-29

申请号：US15169290

申请日：2016-05-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Andrew Christopher Graeme Wood

IPC: H01L29/06 ,  H01L29/40 ,  H01L21/324 ,  H01L29/66 ,  H01L21/265 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/0634 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815

Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.

公开(公告)号：US20190334000A1

公开(公告)日：2019-10-31

申请号：US16393051

申请日：2019-04-24

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Peter Brandl ,  Franz Hirler ,  Andrew Christopher Graeme Wood

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L29/36 ,  H01L29/78

Abstract: A transistor component includes at least one transistor cell having: a drift region, a source region, a body region and a drain region in a semiconductor body, the body region being arranged between the source and drift regions, and the drift region being arranged between the body and drain regions; a gate electrode arranged adjacent to the body region and dielectrically isolated from the body region by a gate dielectric; and a field electrode arranged adjacent to the drift region and dielectrically isolated from the drift region by a field electrode dielectric. The field electrode dielectric has a thickness that increases in a direction toward the drain region. The drift region has, in a mesa region adjacent to the field electrode, a doping concentration that increases in the direction toward the drain region.

公开(公告)号：US20190051749A1

公开(公告)日：2019-02-14

申请号：US16100496

申请日：2018-08-10

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Peter Brandl ,  Andrew Christopher Graeme Wood

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L21/266 ,  H01L21/225 ,  H01L29/66 ,  H01L29/40

Abstract: A semiconductor component includes a field-effect transistor arrangement having a drift zone and body region between the drift zone and a first surface of a semiconductor body. Trench structures of a first type extend from the first surface into the semiconductor body and have a maximum lateral dimension at the first surface which is less than a depth of first and second ones of the trench structures. A net doping concentration at a reference depth at a first location in the drift zone is at least 10% greater than at a second location in the drift zone at the reference depth, which is located between the body region and a bottom of the first trench structure. The first location is at the same first lateral distance from the first and second trench structures. The second location is at the same second lateral distance from the first and second trench structures.

公开(公告)号：US09812563B2

公开(公告)日：2017-11-07

申请号：US15182244

申请日：2016-06-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Markus Zundel ,  Karl-Heinz Bach ,  Franz Hirler ,  Christian Kampen ,  Werner Schustereder

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/7813 ,  H01L21/265 ,  H01L21/2652 ,  H01L21/324 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66734

Abstract: A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.

公开(公告)号：US20180286944A1

公开(公告)日：2018-10-04

申请号：US15941637

申请日：2018-03-30

Applicant: Infineon Technologies AG

Inventor： Andreas Meiser ,  Karl-Heinz Bach ,  Christian Kampen ,  Dietmar Kotz ,  Andrew Christopher Graeme Wood ,  Markus Zundel

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L21/266 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/0619 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor device includes a semiconductor body having a semiconductor substrate of a first conductivity type and a semiconductor layer of the first conductivity type on the substrate. A trench structure extends into the semiconductor body from a first surface and includes a gate electrode and at least one field electrode arranged between the gate electrode and a bottom side of the trench structure. A body region adjoins the trench structure and laterally extends from a transistor cell area into an edge termination area. A pn junction is between the body region and semiconductor layer. A doping concentration of at least one of the body region and semiconductor layer is lowered at a lateral end of the pn junction in the edge termination area compared to a doping concentration of the at least one of the body region and semiconductor layer at the pn junction in the transistor cell area.

公开(公告)号：US09847387B2

公开(公告)日：2017-12-19

申请号：US15169290

申请日：2016-05-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Karl-Heinz Bach ,  Andrew Christopher Graeme Wood

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/739 ,  H01L29/10 ,  H01L21/265 ,  H01L21/324 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/0634 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42376 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7815

Abstract: What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. The pn junction extends between two sidewalls of the semiconductor mesa.

公开(公告)号：US20160365441A1

公开(公告)日：2016-12-15

申请号：US15182244

申请日：2016-06-14

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Markus Zundel ,  Karl-Heinz Bach ,  Franz Hirler ,  Christian Kampen ,  Werner Schustereder

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/324 ,  H01L29/66 ,  H01L21/265 ,  H01L29/10 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L21/265 ,  H01L21/2652 ,  H01L21/324 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66734

Abstract: A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench.

Abstract translation: 晶体管单元在半导体本体中包括第一掺杂类型的漂移区，第一掺杂型的源极区，第二掺杂型的体区和第一掺杂型的漏极区。 身体区域布置在源区和漂移区之间。 漂移区域布置在体区和漏区之间。 栅极电极与主体区域相邻并且通过栅极电介质与体区电介质绝缘，并且场电极通过场电极电介质与漂移区域介电绝缘。 漂移区域包括具有比与雪崩区域相邻的漂移区域的部分更高的掺杂浓度的雪崩区域，并且在与电流流动方向垂直的方向上与场电极电介质间隔开。 场电极布置在针状沟槽中。