公开(公告)号：US20220407004A1

公开(公告)日：2022-12-22

申请号：US17350398

申请日：2021-06-17

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H01L45/00 ,  H01L23/66

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals

公开(公告)号：US20210376234A1

公开(公告)日：2021-12-02

申请号：US17330610

申请日：2021-05-26

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H01L45/00

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.