公开(公告)号：US20240040803A1

公开(公告)日：2024-02-01

申请号：US18379423

申请日：2023-10-12

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/30 ,  H10N70/021 ,  H10N70/231 ,  H10N70/826

Abstract: An integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch, wherein at least a part of the phase change switch is provided below the first metallization layer, wherein the first metallization layer is provided laterally adjacent to the phase change switch, wherein the phase change switch comprises a heater, and wherein the heater and a part of the transistor are each provided in a lower-level interconnect layer of the integrated circuit.

公开(公告)号：US11818900B2

公开(公告)日：2023-11-14

申请号：US17192979

申请日：2021-03-05

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H10B63/00 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/30 ,  H10N70/021 ,  H10N70/231 ,  H10N70/826

Abstract: An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

公开(公告)号：US20230337554A1

公开(公告)日：2023-10-19

申请号：US18130520

申请日：2023-04-04

Applicant: Infineon Technologies AG

Inventor： Hans-Dieter Wohlmuth ,  Dominik Heiss ,  Valentyn Solomko

IPC: H10N70/20 ,  H10N70/00 ,  H10N79/00

CPC classification number: H10N70/231 ,  H10N70/8613 ,  H10N79/00

Abstract: A phase change switch device includes a phase change material and a heater device thermally coupled to the phase change material. The heater device is configured to have a first electrical resistance in a first state where current is applied to the heater device for heating the phase change material, and have a second electrical resistance higher than the first electrical resistance in a second state outside heating phases of the heater device.

公开(公告)号：US11563174B2

公开(公告)日：2023-01-24

申请号：US16844450

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H01L45/00

Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

公开(公告)号：US20210280637A1

公开(公告)日：2021-09-09

申请号：US17192979

申请日：2021-03-05

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Christoph Glacer ,  Dominik Heiss ,  Christoph Kadow

IPC: H01L27/24 ,  H01L45/00

Abstract: An integrated circuit is provided. The integrated circuit includes a transistor, a first metallization layer above the transistor and electrically connected to the transistor, and a phase change switch. At least a part of the phase change switch is provided below the first metallization layer. The first metallization layer is provided laterally adjacent to the phase change switch. Moreover, a method is provided for manufacturing an integrated circuit. Further provided is a wafer for manufacturing an integrated circuit, and a method for manufacturing a wafer for manufacturing an integrated circuit.

公开(公告)号：US20250046559A1

公开(公告)日：2025-02-06

申请号：US18791886

申请日：2024-08-01

Applicant: Infineon Technologies AG

Inventor： Bernd Pflaum ,  Andreas Bänisch ,  Dominik Heiss

IPC: H01H85/46 ,  H01H85/00

Abstract: A controller for a phase change switch device, a system including the controller, a phase change switch device, and a corresponding method are provided. The controller includes a control input configured to receive a first control signal indicating a desired state of the phase change switch device and a measurement input configured to receive a measurement signal indicating an actual state of the phase change switch device. A control logic is configured to generate a second control signal based on the first control signal and the measurement signal. The controller further includes a control output configured to output the second control signal to at least one heater of the phase change switch device.

公开(公告)号：US20230343531A1

公开(公告)日：2023-10-26

申请号：US18130446

申请日：2023-04-04

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Dominik Heiss ,  Semen Syroiezhin

IPC: H01H37/14 ,  H01H37/72 ,  H10N70/00 ,  H10N70/20

CPC classification number: H01H37/14 ,  H01H37/72 ,  H10N70/8613 ,  H10N70/231 ,  H10N70/823

Abstract: A phase change material switch device is provided. The phase change material switch device includes a phase change material, a first electrode electrically coupled to the phase change material, and at least one heater thermally coupled to the phase change material. An equalization device is configured to provide an impedance coupling between the first electrode and the phase change material. The impedance coupling varies over the phase change material.

公开(公告)号：US20220407004A1

公开(公告)日：2022-12-22

申请号：US17350398

申请日：2021-06-17

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H01L45/00 ,  H01L23/66

Abstract: A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals

公开(公告)号：US20220199343A1

公开(公告)日：2022-06-23

申请号：US17455595

申请日：2021-11-18

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Dominik Heiss ,  Christoph Kadow

IPC: H01H37/02

Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

公开(公告)号：US20210376234A1

公开(公告)日：2021-12-02

申请号：US17330610

申请日：2021-05-26

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Matthias Markert

IPC: H01L45/00

Abstract: A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.