公开(公告)号：US20240021725A1

公开(公告)日：2024-01-18

申请号：US18088546

申请日：2022-12-24

Applicant: Intel Corporation

Inventor： Han Wui THEN ,  Marko RADOSAVLJEVIC ,  Samuel James BADER ,  Pratik KOIRALA ,  Michael S. BEUMER ,  Heli Chetanbhai VORA ,  Ahmad ZUBAIR

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7838 ,  H01L29/66462 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/4236

Abstract: Gallium nitride (GaN) transistors with lateral depletion for integrated circuit technology are described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen above a silicon substrate, a gate structure over the layer including gallium and nitrogen, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, and a source field plate laterally between the gate structure and the drain region, the source field plate laterally separated from the gate structure.

公开(公告)号：US20230054719A1

公开(公告)日：2023-02-23

申请号：US17408025

申请日：2021-08-20

Applicant: Intel Corporation

Inventor： Pratik KOIRALA ,  Souvik GHOSH ,  Paul NORDEEN ,  Tushar TALUKDAR ,  Thomas HOFF ,  Ibrahim BAN ,  Kimin JUN ,  Samuel James BADER ,  Marko RADOSAVLJEVIC ,  Nicole K. THOMAS ,  Paul B. FISCHER ,  Han Wui THEN

IPC: H01L29/778 ,  H01L29/20

Abstract: Gallium nitride (GaN) layer transfer and regrowth for integrated circuit technology is described. In an example, an integrated circuit structure includes a substrate. An insulator layer is over the substrate. A device layer is directly on the insulator layer. The device layer has a thickness of less than approximately 500 nanometers.