公开(公告)号：US08847187B2

公开(公告)日：2014-09-30

申请号：US13692850

申请日：2012-12-03

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  David Chi

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

公开(公告)号：US20140151621A1

公开(公告)日：2014-06-05

申请号：US13692850

申请日：2012-12-03

Applicant: INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

Inventor： Mihir Tendulkar ,  David Chi

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

Abstract: Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.