公开(公告)号：US20140363948A1

公开(公告)日：2014-12-11

申请号：US14468687

申请日：2014-08-26

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar ,  David Chi

IPC分类号： H01L45/00 ,  H01L21/285 ,  H01L49/02

CPC分类号： H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

公开(公告)号：US08847187B2

公开(公告)日：2014-09-30

申请号：US13692850

申请日：2012-12-03

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar ,  David Chi

IPC分类号： H01L29/02 ,  H01L45/00

CPC分类号： H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

公开(公告)号：US20140264223A1

公开(公告)日：2014-09-18

申请号：US13835256

申请日：2013-03-15

申请人： INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

发明人： Mihir Tendulkar ,  Randall J. Higuchi ,  Chien-Lan Hsueh

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/165 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1625

摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

摘要翻译： 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括串联连接的嵌入式电阻和电阻开关层。 嵌入式电阻器阻止通过电阻开关层的过多电流，特别是当电阻式开关层切换到其低电阻状态时，从而防止过度编程。 嵌入式电阻器包括铝，氮和一种或多种另外的金属（除铝以外）。 控制每个组分的浓度以实现嵌入式电阻器的期望的电阻率和稳定性。 在一些实施例中，电阻率范围为0.1欧姆至40欧姆厘米，并且在施加高达8兆伏特/厘米的电场到嵌入式电阻器时保持基本恒定。 嵌入式电阻器可以由非晶材料制成，并且即使经受典型的退火条件，该材料也可操作以保持非晶态。

公开(公告)号：US20140175363A1

公开(公告)日：2014-06-26

申请号：US13721476

申请日：2012-12-20

申请人： INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

发明人： Mihir Tendulkar ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC分类号： H01L45/00

CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1633

摘要： Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.

摘要翻译： 提供了形成包括电阻切换层的非易失性存储元件的方法。 一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。 存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。 作为该扩散的结果，前体层被转换成电阻切换层。 前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。 形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。 至少在退火之前，反应电极可以基本上不含氧。 在氢气存在下，可以在250-400℃下进行退火。 这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。

公开(公告)号：US20140151621A1

公开(公告)日：2014-06-05

申请号：US13692850

申请日：2012-12-03

申请人： INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

发明人： Mihir Tendulkar ,  David Chi

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

公开(公告)号：US09276210B1

公开(公告)日：2016-03-01

申请号：US14561212

申请日：2014-12-04

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar

IPC分类号： H01L45/00 ,  H01L27/00

CPC分类号： H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

摘要： In a thin-film resistor stack (e.g. A ReRAM embedded resistor), a metallic barrier layer 1-5 nm thick protects an underlying or overlying ternary metal nitride layer from unwanted oxidation while having negligible effect on the resistance or height of the stack. For devices subjected to temperatures over 650 C after forming the stack, the metallic barrier layer may be iridium or ruthenium. For devices with temperatures kept below 650 C after forming the stack, the metallic barrier layer may be Al. The metallic barrier layer(s) and the ternary nitride layer may be formed in situ, for example by sputtering or atomic layer deposition.

摘要翻译： 在薄膜电阻器堆叠（例如A ReRAM嵌入式电阻器）中，1-5nm厚度的金属阻挡层保护下面或覆盖的三元金属氮化物层免受不希望的氧化，同时对堆叠的电阻或高度具有可忽略的影响。 对于在形成叠层之后经受650℃以上温度的器件，金属阻挡层可以是铱或钌。 对于在形成堆叠之后，温度保持在650℃以下的器件，金属阻挡层可以是Al。 金属阻挡层和三元氮化物层可以原位形成，例如通过溅射或原子层沉积。

公开(公告)号：US08981329B1

公开(公告)日：2015-03-17

申请号：US14548408

申请日：2014-11-20

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar ,  David Chi

IPC分类号： H01L29/02 ,  H01L45/00 ,  H01L49/02 ,  H01L27/24

CPC分类号： H01L45/146 ,  H01L21/28506 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2463 ,  H01L28/24 ,  H01L45/06 ,  H01L45/08 ,  H01L45/10 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641

摘要： Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

摘要翻译： 本发明的实施例包括具有改进的器件性能和寿命的非易失性电阻随机存取存储器件的非易失性存储器件。 在一些实施例中，非易失性电阻随机存取存储器件包括二极管，金属氮化硅嵌入式电阻器和设置在第一电极层和第二电极层之间的电阻开关层。 在一些实施例中，形成电阻随机存取存储器件的方法包括形成二极管，形成金属氮化硅嵌入式电阻器，形成第一电极层，形成第二电极层，以及形成电阻开关层， 层和第二电极层。

公开(公告)号：US20140377931A1

公开(公告)日：2014-12-25

申请号：US14480025

申请日：2014-09-08

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar ,  Randall J. Higuchi ,  Chien-Lan Hsueh

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/165 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1625

摘要： Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

公开(公告)号：US08796103B2

公开(公告)日：2014-08-05

申请号：US13721476

申请日：2012-12-20

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC分类号： H01L21/16

CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1633

摘要： Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick.

摘要翻译： 提供了形成包括电阻切换层的非易失性存储元件的方法。 一种方法包括通过退火将氧从前体层扩散到一个或多个反应电极。 存储元件中的至少一个电极是反应性的，而另一个电极可能是惰性的。 作为该扩散的结果，前体层被转换成电阻切换层。 前体层可以最初包括化学计量的氧化物，其通常在氧空位产生之前不表现出电阻转换特性。 形成这种氧化物的金属可能比形成反应性电极的金属更具电负性。 至少在退火之前，反应电极可以基本上不含氧。 在氢气存在下，可以在250-400℃下进行退火。 这些方法简化了过程控制，并且可以用于形成包括小于20埃厚的电阻开关层的非易失性存储元件。

公开(公告)号：US20140175360A1

公开(公告)日：2014-06-26

申请号：US13721358

申请日：2012-12-20

申请人： Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

发明人： Mihir Tendulkar ,  Vidyut Gopal ,  Imran Hashim ,  Randall J. Higuchi ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC分类号： H01L45/00

CPC分类号： H01L45/146 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1625

摘要： Provided are resistive random access memory (ReRAM) cells having bi-layered metal oxide structures. The layers of a bi-layered structure may have different compositions and thicknesses. Specifically, one layer may be thinner than the other layer, sometimes as much as 5 to 20 times thinner. The thinner layer may be less than 30 Angstroms thick or even less than 10 Angstroms thick. The thinner layer is generally more oxygen rich than the thicker layer. Oxygen deficiency of the thinner layer may be less than 5 atomic percent or even less than 2 atomic percent. In some embodiments, a highest oxidation state metal oxide may be used to form a thinner layer. The thinner layer typically directly interfaces with one of the electrodes, such as an electrode made from doped polysilicon. Combining these specifically configured layers into the bi-layered structure allows improving forming and operating characteristics of ReRAM cells.

摘要翻译： 提供了具有双层金属氧化物结构的电阻随机存取存储器（ReRAM）单元。 双层结构的层可以具有不同的组成和厚度。 具体地说，一层可以比另一层薄一些，有时可以减薄5至20倍。 较薄的层可以小于30埃厚或甚至小于10埃厚。 较薄的层通常比较厚的层富氧。 较薄层的缺氧可能小于5原子％或甚至小于2原子％。 在一些实施方案中，可以使用最高氧化态金属氧化物来形成较薄的层。 较薄的层通常直接与一个电极（例如由掺杂多晶硅制成的电极）接合。 将这些特定配置的层组合成双层结构允许改善ReRAM单元的成形和操作特性。