Combinatorial Site Isolated Plasma Assisted Deposition
    11.
    发明申请
    Combinatorial Site Isolated Plasma Assisted Deposition 审中-公开
    组合场隔离等离子体辅助沉积

    公开(公告)号:US20140134849A1

    公开(公告)日:2014-05-15

    申请号:US13672840

    申请日:2012-11-09

    CPC classification number: C23C16/04 C23C16/4584

    Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

    Abstract translation: 提供一种装置,其包括基座,从基座延伸的侧壁和设置在侧壁顶部上的盖。 等离子体产生源延伸穿过盖的表面。 可旋转的基板支撑件设置在基座的表面之上的腔室内,可旋转的基底支撑件可操作以从基座垂直平移到盖子。 第一流体入口延伸到侧壁的第一表面中,并且第二流体入口延伸到侧壁的第二表面中。 等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域,并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积 在该地区的一层材料。

Patent Agency Ranking