公开(公告)号：US20140030887A1

公开(公告)日：2014-01-30

申请号：US14045100

申请日：2013-10-03

Applicant: Intermolecular Inc.

Inventor： Sean Barstow ,  Owen Ho Yin Fong

IPC: H01L21/768

CPC classification number: H01L21/76867 ,  C23C14/042 ,  C23C14/3464

Abstract: Provided are methods and systems for forming discreet multilayered structures. Each structure may be deposited by in situ deposition of multiple layers at one of multiple site isolation regions provided on the same substrate for use in combinatorial processing. Alignment of different layers within each structure is provided by using two or more differently sized openings in-between one or more sputtering targets and substrate. Specifically, deposition of a first layer is performed through the first opening that defines a first deposition area. A shutter having a second smaller opening is then positioned in-between the one or more targets and substrate. Sputtering of a second layer is then performed through this second opening that defines a second deposition area. This second deposition area may be located within the first deposition area based on sizing and alignment of the openings as well as alignment of the substrate.

Abstract translation: 提供形成谨慎的多层结构的方法和系统。 每个结构可以通过在设置在同一基底上的多个位置隔离区域之一的原位沉积多层来沉积，以用于组合处理。 通过在一个或多个溅射靶和衬底之间使用两个或更多个不同尺寸的开口来提供每个结构内的不同层的对准。 具体地，通过限定第一沉积区域的第一开口进行第一层的沉积。 然后将具有第二较小开口的闸板定位在一个或多个目标和基板之间。 然后通过限定第二沉积区域的该第二开口进行第二层的溅射。 基于开口的尺寸和对准以及衬底的对准，该第二沉积区域可以位于第一沉积区域内。

公开(公告)号：US08889547B2

公开(公告)日：2014-11-18

申请号：US14045100

申请日：2013-10-03

Applicant: Intermolecular Inc.

Inventor： Sean Barstow ,  Owen Ho Yin Fong

IPC: H01L21/44 ,  H01L21/768 ,  C23C14/04 ,  C23C14/34

CPC classification number: H01L21/76867 ,  C23C14/042 ,  C23C14/3464

Abstract: Provided are methods and systems for forming discreet multilayered structures. Each structure may be deposited by in situ deposition of multiple layers at one of multiple site isolation regions provided on the same substrate for use in combinatorial processing. Alignment of different layers within each structure is provided by using two or more differently sized openings in-between one or more sputtering targets and substrate. Specifically, deposition of a first layer is performed through the first opening that defines a first deposition area. A shutter having a second smaller opening is then positioned in-between the one or more targets and substrate. Sputtering of a second layer is then performed through this second opening that defines a second deposition area. This second deposition area may be located within the first deposition area based on sizing and alignment of the openings as well as alignment of the substrate.

Abstract translation: 提供形成谨慎的多层结构的方法和系统。 每个结构可以通过在设置在同一基底上的多个位置隔离区域之一的原位沉积多层来沉积，以用于组合处理。 通过在一个或多个溅射靶和衬底之间使用两个或更多个不同尺寸的开口来提供每个结构内的不同层的对准。 具体地，通过限定第一沉积区域的第一开口进行第一层的沉积。 然后将具有第二较小开口的闸板定位在一个或多个目标和基板之间。 然后通过限定第二沉积区域的该第二开口进行第二层的溅射。 基于开口的尺寸和对准以及衬底的对准，该第二沉积区域可以位于第一沉积区域内。

公开(公告)号：US20140134849A1

公开(公告)日：2014-05-15

申请号：US13672840

申请日：2012-11-09

Applicant: INTERMOLECULAR INC.

Inventor： Sandip Niyogi ,  Owen Ho Yin Fong ,  Sunil Shanker ,  ShouQian Shao ,  Jingang Su ,  J. Watanabe ,  Wenxian Zhu

IPC: C23C16/458 ,  H01L21/02

CPC classification number: C23C16/04 ,  C23C16/4584

Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

Abstract translation: 提供一种装置，其包括基座，从基座延伸的侧壁和设置在侧壁顶部上的盖。 等离子体产生源延伸穿过盖的表面。 可旋转的基板支撑件设置在基座的表面之上的腔室内，可旋转的基底支撑件可操作以从基座垂直平移到盖子。 第一流体入口延伸到侧壁的第一表面中，并且第二流体入口延伸到侧壁的第二表面中。 等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域，并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积 在该地区的一层材料。