公开(公告)号：US20140183036A1

公开(公告)日：2014-07-03

申请号：US13728096

申请日：2012-12-27

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Kent Riley Child ,  Jingang Su

IPC: G01B11/24

CPC classification number: H01J37/3476 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/3479 ,  H01J37/3482

Abstract: Methods and systems for in situ measuring sputtering target erosion are disclosed. The emission of material from the sputtering target is stopped, a distance sensor is scanned across a radial line on the sputtering target. The sputtering chamber contains a controlled environment separate and distinct from the environment outside the chamber, and the controlled environment is maintained during the scanning The resulting distance data is converted into a surface profile of the sputtering target. The accuracy of the surface profile can be less than about ±1 μm. The distance sensor is protected from deposition of the material from the sputtering target. End-of-life for a sputtering target can be determined by obtaining a surface profile of the sputtering target at regular intervals and replacing the sputtering target when the thinnest location on the target as measured by the surface profile is below a predetermined threshold.

Abstract translation: 公开了用于原位测量溅射靶侵蚀的方法和系统。 停止从溅射靶发射材料，通过溅射靶上的径向线扫描距离传感器。 溅射室包含与室外环境分离和不同的受控环境，并且在扫描期间保持受控环境。所得到的距离数据被转换成溅射靶的表面轮廓。 表面轮廓的精度可以小于约±1μm。 保护距离传感器免受溅射靶材料的沉积。 溅射靶的寿命终止可以通过以规则的间隔获得溅射靶的表面轮廓并且当由表面轮廓测量的靶上的最薄位置低于预定阈值时，代替溅射靶来确定。

公开(公告)号：US20140130922A1

公开(公告)日：2014-05-15

申请号：US13674335

申请日：2012-11-12

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Vincent Li ,  Jason R. Wright

IPC: C01B13/11 ,  F16K21/00

CPC classification number: F16K21/00 ,  C01B13/10 ,  Y10T137/877

Abstract: Systems and methods to delivery multiple ozone flows from a single ozone generator are disclosed. An ozone distribution manifold can include an oxygen input for converting the output from the ozone generator to multiple ozone flows with different ozone concentration. The ozone distribution manifold can include multiple flow controllers to regulate the multiple ozone flows to provide different ozone flow rates.

Abstract translation: 公开了从单个臭氧发生器输送多个臭氧流的系统和方法。 臭氧分配歧管可以包括用于将臭氧发生器的输出转换成具有不同臭氧浓度的多个臭氧流的氧气输入。 臭氧分布歧管可以包括多个流量控制器以调节多个臭氧流量以提供不同的臭氧流量。

公开(公告)号：US20140124359A1

公开(公告)日：2014-05-08

申请号：US13667856

申请日：2012-11-02

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Kent Riley Child ,  Danny Wang ,  Xuena Zhang

IPC: C23C14/35

CPC classification number: C23C14/042 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00754 ,  B01J2219/00756 ,  C23C14/351 ,  H01J37/3408 ,  H01J37/3452

Abstract: Methods and apparatuses for performing combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. The processing chamber includes a sputter assembly disposed over the substrate. The sputter assembly includes a rotatable n-fold, symmetric-shaped magnetron and a sputter target. The methods include depositing a first film on the surface of a first site-isolated region of the substrate. The methods further include depositing a second film on the surface of a second site-isolated region of the substrate. Furthermore, methods include evaluating results of the first and second films.

Abstract translation: 公开了用于执行组合处理的方法和装置。 方法包括将衬底引入处理室。 处理室包括设置在基板上方的溅射组件。 溅射组件包括可旋转的n倍对称形磁控管和溅射靶。 所述方法包括在衬底的第一位置隔离区域的表面上沉积第一膜。 该方法还包括在衬底的第二位置隔离区域的表面上沉积第二膜。 此外，方法包括评估第一和第二膜的结果。

公开(公告)号：US08821985B2

公开(公告)日：2014-09-02

申请号：US13667986

申请日：2012-11-02

Applicant: Intermolecular, Inc.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Sandip Niyogi ,  Jinhong Tong

IPC: B05D3/00 ,  H05H1/00

CPC classification number: C23C16/45542 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/00754 ,  B01J2219/00756 ,  C23C16/04 ,  C23C16/45565

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. Methods further include forming a first film on a surface of a first site-isolated region on the substrate and forming a second film on a surface of a second site-isolated region on the substrate. The methods further include exposing the first film to a plasma having a first source gas to form a first treated film on the substrate and exposing the second film to a plasma having a second source gas to form a second treated film on the substrate without etching the first treated film in the processing chamber. In addition, methods include evaluating results of the treated films post processing.

Abstract translation: 公开了用于组合处理的方法和装置。 方法包括将衬底引入处理室。 方法还包括在衬底上的第一位点隔离区域的表面上形成第一膜，并在衬底上的第二位置隔离区域的表面上形成第二膜。 所述方法还包括将第一膜暴露于具有第一源气体的等离子体，以在衬底上形成第一处理膜，并将第二膜暴露于具有第二源气体的等离子体，以在衬底上形成第二处理膜，而不蚀刻 处理室中的第一处理膜。 此外，方法包括评估经处理的膜后处理的结果。

公开(公告)号：US20140127422A1

公开(公告)日：2014-05-08

申请号：US13667986

申请日：2012-11-02

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Sandip Niyogi ,  Jinhong Tong

IPC: B05D3/10

CPC classification number: C23C16/45542 ,  B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/00754 ,  B01J2219/00756 ,  C23C16/04 ,  C23C16/45565

Abstract: Methods and apparatuses for combinatorial processing are disclosed. Methods include introducing a substrate into a processing chamber. Methods further include forming a first film on a surface of a first site-isolated region on the substrate and forming a second film on a surface of a second site-isolated region on the substrate. The methods further include exposing the first film to a plasma having a first source gas to form a first treated film on the substrate and exposing the second film to a plasma having a second source gas to form a second treated film on the substrate without etching the first treated film in the processing chamber. In addition, methods include evaluating results of the treated films post processing.

Abstract translation: 公开了用于组合处理的方法和装置。 方法包括将衬底引入处理室。 方法还包括在衬底上的第一位点隔离区域的表面上形成第一膜，并在衬底上的第二位置隔离区域的表面上形成第二膜。 所述方法还包括将第一膜暴露于具有第一源气体的等离子体，以在衬底上形成第一处理膜，并将第二膜暴露于具有第二源气体的等离子体，以在衬底上形成第二处理膜，而不蚀刻 处理室中的第一处理膜。 此外，方法包括评估经处理的膜后处理的结果。

公开(公告)号：US09330928B2

公开(公告)日：2016-05-03

申请号：US14084843

申请日：2013-11-20

Applicant: Intermolecular Inc.

Inventor： Jinhong Tong ,  Frederick Carlos Fulgenico ,  ShouQian Shao

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  H01L21/3065 ,  H01L21/3213 ,  H01L45/00 ,  H01L21/311 ,  H01L27/24

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

Abstract: A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.

Abstract translation: 公开了一种用于选择性蚀刻包括在衬底上的HfO 2或ZrO 2层上的TiN层上的铂层的多层金属氧化物堆叠的方法。 在一些实施例中，该方法包括用于选择性地蚀刻铂层的物理溅射工艺，接着是包括CHF 3和氧气的等离子体蚀刻工艺，以相对于衬底选择性地蚀刻TiN，HfO 2或ZrO 2层。

公开(公告)号：US20140170335A1

公开(公告)日：2014-06-19

申请号：US13716829

申请日：2012-12-17

Applicant: INTERMOLECULAR, INC.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

IPC: C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。

公开(公告)号：US20140134849A1

公开(公告)日：2014-05-15

申请号：US13672840

申请日：2012-11-09

Applicant: INTERMOLECULAR INC.

Inventor： Sandip Niyogi ,  Owen Ho Yin Fong ,  Sunil Shanker ,  ShouQian Shao ,  Jingang Su ,  J. Watanabe ,  Wenxian Zhu

IPC: C23C16/458 ,  H01L21/02

CPC classification number: C23C16/04 ,  C23C16/4584

Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

Abstract translation: 提供一种装置，其包括基座，从基座延伸的侧壁和设置在侧壁顶部上的盖。 等离子体产生源延伸穿过盖的表面。 可旋转的基板支撑件设置在基座的表面之上的腔室内，可旋转的基底支撑件可操作以从基座垂直平移到盖子。 第一流体入口延伸到侧壁的第一表面中，并且第二流体入口延伸到侧壁的第二表面中。 等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域，并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积 在该地区的一层材料。

公开(公告)号：US20140077147A1

公开(公告)日：2014-03-20

申请号：US14084843

申请日：2013-11-20

Applicant: Intermolecular Inc.

Inventor： Jinhong Tong ,  Frederick Carlos Fulgenico ,  ShouQian Shao

IPC: H01L21/3065 ,  H01L45/00

CPC classification number: H01L21/3065 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

Abstract: A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfO2 or ZrO2 layer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHF3 and oxygen to selectively etch the TiN, HfO2 or ZrO2 layers with respect to the substrate.

Abstract translation: 公开了一种用于选择性蚀刻包括在衬底上的HfO 2或ZrO 2层上的TiN层上的铂层的多层金属氧化物堆叠的方法。 在一些实施例中，该方法包括用于选择性地蚀刻铂层的物理溅射工艺，接着是包括CHF 3和氧气的等离子体蚀刻工艺，以相对于衬底选择性地蚀刻TiN，HfO 2或ZrO 2层。

公开(公告)号：US20150184298A1

公开(公告)日：2015-07-02

申请号：US14660772

申请日：2015-03-17

Applicant: Intermolecular, Inc.

Inventor： ShouQian Shao ,  Chi-I Lang ,  Jingang Su

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45544 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus and methods for depositing materials on a plurality of site-isolated regions on a substrate are provided. The deposition uses PECVD or PEALD. The apparatus include an inner chamber with an aperture and barrier that can be used to isolate the regions during the deposition and prevent the remaining portions of the substrate from being exposed to the deposition process. The process parameters for the deposition process are varied among the site-isolate regions in a combinatorial manner.

Abstract translation: 提供了用于在衬底上的多个位置隔离区域上沉积材料的设备和方法。 沉积使用PECVD或PEALD。 该装置包括具有开口和屏障的内室，其可以用于在沉积期间隔离区域，并且防止基板的剩余部分暴露于沉积工艺。 用于沉积过程的工艺参数以组合方式在位点隔离区域之间变化。