公开(公告)号：US20070077683A1

公开(公告)日：2007-04-05

申请号：US11241741

申请日：2005-09-30

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： H01L51/40

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879

摘要： An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the size of the grain features in the deposited material opening at the top of the feature during the process. Plural sequential dry filling plasma processes are used with backside gas pressure varied to control substrate temperature.

摘要翻译： iPVD系统被编程为使用与现场沉积相比增强特征填充的过程，将均匀的材料（例如金属材料）沉积在半导体衬底上的高纵横比纳米尺寸特征中，同时最大化晶粒特征的尺寸 在该过程中，沉积材料在特征的顶部开口。 使用多个顺序干灌装等离子体工艺，其背面气体压力变化以控制衬底温度。

公开(公告)号：US20070077682A1

公开(公告)日：2007-04-05

申请号：US11241722

申请日：2005-09-30

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： H01L51/40

CPC分类号： C23C14/541 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01L21/2855 ,  H01L21/76876 ,  H01L21/76879

摘要： An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the size of the grain features in the deposited material opening at the top of the feature during the process. Sequential deposition and etching are provided by controlling DC and high density power levels and other parameters.

摘要翻译： iPVD系统被编程为使用与现场沉积相比增强特征填充的过程，将均匀的材料（例如金属材料）沉积在半导体衬底上的高纵横比纳米尺寸特征中，同时最大化晶粒特征的尺寸 在该过程中，沉积材料在特征的顶部开口。 通过控制DC和高密度功率等级和其他参数来提供顺序沉积和蚀刻。

公开(公告)号：US20060213764A1

公开(公告)日：2006-09-28

申请号：US11091741

申请日：2005-03-28

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： C23C14/00

CPC分类号： C23C14/046 ,  C23C14/354 ,  H01L21/2855 ,  H01L21/76843

摘要： An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

摘要翻译： iPVD系统被编程为使用与场和底部覆盖相比增强侧壁覆盖度的方法将均匀的材料（例如阻挡材料）沉积到半导体衬底上的高纵横比纳米尺寸特征中，同时最小化或消除 一个真空室。 iPVD系统以低目标功率和高压> 50 mT运行，以从目标溅射材料。 RF能量耦合到腔室中以形成高密度等离子体。 可以应用小的RF偏压（小于几伏）来帮助增强覆盖范围，特别是在底部。