Electrodeposition of indium-thallium shape memory alloys
    11.
    发明授权
    Electrodeposition of indium-thallium shape memory alloys 失效
    铟 - 铊形状记忆合金的电沉积

    公开(公告)号:US5203931A

    公开(公告)日:1993-04-20

    申请号:US763343

    申请日:1991-09-20

    申请人: Thomas J. O'Keefe

    发明人: Thomas J. O'Keefe

    IPC分类号: C25D3/56 C25D5/18

    CPC分类号: C25D3/56 C25D5/18

    摘要: A process for preparing an indium-thallium alloy which exhibits shape memory transformation at a temperature greater than that temperature at which shape memory transformation would occur for a thermally prepared alloy of the same composition. The process includes providing an article for use as a cathode, providing an electrolyte which comprises indium and thallium ions, and electrodepositing an indium-thallium alloy having between about 21 and about 35 atomic percent thallium onto the article. A process for preparing an article constructed of an electrodeposited indium-thallium alloy which exhibits shape memory effect. An electrodeposited indium-based shape memory alloy.

    摘要翻译: 一种制备铟 - 铊合金的方法,其在比相同组成的热制备合金发生形状记忆转变的温度高的温度下表现出形状记忆转变。 该方法包括提供用作阴极的制品,提供包含铟和铊离子的电解质,并将具有约21至约35原子%铊的铟 - 铊合金电沉积到制品上。 一种制备由电沉积铟 - 铊合金构成的制品的方法,其具有形状记忆效应。 电沉积铟基形状记忆合金。