公开(公告)号：US08711126B2

公开(公告)日：2014-04-29

申请号：US13422958

申请日：2012-03-16

申请人： Jun Saito

发明人： Jun Saito

IPC分类号： G06F3/042

CPC分类号： G06F3/0423 ,  G06F3/0233 ,  G06F2203/04105

摘要： A specific information input region (B) individually specifying information to be input and an input mode switching region (C) used for changing an information input mode are placed on an information input region (A) set on a substrate. Each of these regions is displayed to be visible. An optical sensor detects a touched position on the information input region. Then, the touch operation in the input mode switching region (C) is detected according to the output of the optical sensor to selectively switch the information input mode among keyboard input, pen tablet input and mouse input. The output of the optical sensor is analyzed according to the set input mode to find out the information input by the touch operation.

摘要翻译： 分别指定要输入的信息的特定信息输入区域（B）和用于改变信息输入模式的输入模式切换区域（C）被放置在设置在基板上的信息输入区域（A）上。 这些区域中的每一个都显示为可见。 光学传感器检测信息输入区域上的触摸位置。 然后，根据光传感器的输出来检测输入模式切换区域（C）中的触摸操作，以便有选择地在键盘输入，笔图形输入和鼠标输入之间切换信息输入模式。 根据设定的输入模式对光学传感器的输出进行分析，以找出触摸操作输入的信息。

公开(公告)号：US08531857B2

公开(公告)日：2013-09-10

申请号：US12677131

申请日：2008-08-28

申请人： Akitaka Soeno ,  Jun Saito ,  Gehan Anil Joseph Amaratunga ,  Florin Udrea

发明人： Akitaka Soeno ,  Jun Saito ,  Gehan Anil Joseph Amaratunga ,  Florin Udrea

IPC分类号： H02M7/5387

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H03K17/08128 ,  H03K17/0828

摘要： In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.

摘要翻译： 在形成合成电路的反向导通半导体器件中，可以将高于集电极的正电压的正电压施加到发射极。 在这种情况下，在形成有返回二极管的反向导通半导体器件的区域中，体接触区域用作阳极，漂移接触区域用作阴极，并且电流从阳极流到阴极。 此时当沟槽栅电极施加具有比集电极电位低的电压的电压时，在阴极内产生p型载流子，在返回二极管内增加载流子数量。 结果，返回二极管的正向压降降低，并且可以减少电力的恒定损失。 在使用其中开关元件和返回二极管反向并联连接的组合电路的电源装置中，电力损耗可以减小。

公开(公告)号：US08523176B2

公开(公告)日：2013-09-03

申请号：US13084602

申请日：2011-04-12

申请人： Jun Saito

发明人： Jun Saito

IPC分类号： B65H43/04 ,  G03G15/00

CPC分类号： B65H5/021 ,  B65G39/07 ,  B65H2404/252 ,  B65H2801/06

摘要： A protrusion (13a) and a protrusion (13b) are formed a predetermined distance apart in the direction of a shaft in the outer circumferential surface of the roller main body (11). The cross sections of the protrusion (13a) and the protrusion (13b) are shaped such that a center portion of the roller main body (11) in the direction of the shaft is a boundary (14), and that on the left side of the boundary (14), a vertex (131a) is displaced to the left side from the perpendicular bisector (133a) of an opposite side (132a) whereas on the right side of the boundary (14), a vertex (131b) is displaced to the right side from the perpendicular bisector (133b) of an opposite side (132b). In this way, in a metallic movement roller that moves a strung endless belt, the winding movement and the like of the belt can be prevented, and the belt can be intentionally moved in a specific direction.

摘要翻译： 突起（13a）和突起（13b）在辊主体（11）的外周面中沿着轴的方向间隔开预定距离。 突起（13a）和突起（13b）的横截面形状使得辊主体（11）在轴的方向上的中心部分是边界（14），并且在左 边界（14）中，顶点（131a）从相对侧（132a）的垂直平分线（133a）向左侧移位，而在边界（14）的右侧，顶点（131b）位移 到相对侧（132b）的垂直平分线（133b）的右侧。 以这种方式，在移动带状环状带的金属制移动辊中，能够防止带的卷绕动作等，能够有意地沿特定的方向移动带。

公开(公告)号：US20120299229A1

公开(公告)日：2012-11-29

申请号：US13578647

申请日：2011-02-23

申请人： Nobuo Kubo ,  Taiyo Gon ,  Jun Saito ,  Shunji Nagakura ,  Yasuharu Akai

发明人： Nobuo Kubo ,  Taiyo Gon ,  Jun Saito ,  Shunji Nagakura ,  Yasuharu Akai

IPC分类号： F16F13/10

CPC分类号： F16F13/106

摘要： A partition member is provided with an elastic body for absorbing hydraulic pressure fluctuation of the primary liquid chamber and a frame member for supporting an outer circumferential portion of the elastic body while aiming to prevent the rotation of the elastic body. A relief aperture communicating between the primary liquid chamber and the secondary liquid chamber is located on the outer circumferential side in the elastic body supporting region of the frame member. A relief valve for opening and closing the relief aperture is integrally formed on the outer circumferential side of the elastic body. The relief valve is formed of a pair of right and left relief valves. A width across flat sections are formed on a thick-walled outer circumferential section of the elastic body which is located between the right and left relief valves, such as to serve as a detent means.

摘要翻译： 分隔构件设置有用于吸收主液室的液压波动的弹性体和用于支撑弹性体的外周部的框架构件，同时防止弹性体的旋转。 在主液室和辅液室之间连通的减压孔位于框架构件的弹性体支撑区域的外周侧。 在弹性体的外周侧一体地形成有用于打开和关闭释放孔的安全阀。 安全阀由一对左右安全阀构成。 平面部分的宽度形成在位于左右安全阀之间的弹性体的厚壁外周部分上，以用作制动装置。

公开(公告)号：US08248116B2

公开(公告)日：2012-08-21

申请号：US12867591

申请日：2009-02-14

申请人： Akitaka Soeno ,  Jun Saito

发明人： Akitaka Soeno ,  Jun Saito

IPC分类号： H03K3/00

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H03K17/08128 ,  H03K17/567 ,  H03K2217/0036 ,  H03K2217/0045

摘要： A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.

摘要翻译： 提供一种用于反向导电半导体器件的技术，其包括利用具有相互杂质浓度的体区的IGBT元件区域和二极管元件区域，这使得可以调节空穴或电子到二极管元件区域的注入效率。 当返回电流在使用NPNP型IGBT的反向导通半导体器件中流动时，将高于发射极电压的第二电压施加到二极管元件区域的第二沟槽栅电极。 N型反型层形成在第二沟槽栅电极的周围，并且电子通过第一体接触区域和n型相同的漂移区域流过。 电子向返回电流的注入效率提高，并且孔的注入效率降低。 由此，可以防止反向恢复电流的增加，并且可以降低二极管元件区域中引起的开关损耗。

公开(公告)号：US07627323B2

公开(公告)日：2009-12-01

申请号：US10361845

申请日：2003-02-11

申请人： Jun Saito ,  Hitoshi Yokota ,  Tsutomu Hara

发明人： Jun Saito ,  Hitoshi Yokota ,  Tsutomu Hara

IPC分类号： H04W40/00

CPC分类号： H04W16/18

摘要： A system and method for automatically calculating an optimum layout of a wireless cell station in an environment using a wireless communication system, thereby achieving a timesaving and resources-saving cell design procedure. The system calculates an optimum layout of the wireless cell station based on information of terminal locations.

摘要翻译： 一种在使用无线通信系统的环境中自动计算无线小区的最佳布局的系统和方法，从而实现节省时间和节省资源的小区设计过程。 该系统基于终端位置的信息来计算无线小区的最佳布局。

公开(公告)号：US06642583B2

公开(公告)日：2003-11-04

申请号：US10166575

申请日：2002-06-11

申请人： Shinichi Jimbo ,  Jun Saito

发明人： Shinichi Jimbo ,  Jun Saito

IPC分类号： H01L27092

CPC分类号： H01L27/0921

摘要： A semiconductor device is provided having a high voltage driver IC reducing malfunction or device destruction. A high voltage IC chip includes a trench structure that surrounds each of two semiconductor regions at different electrical potentials. Specifically, a first semiconductor region forms a ground-potential-based circuit, and a high voltage junction terminating structure around a second semiconductor region forms a floating-potential-based circuit. A trench structure is formed after digging a trench by implanting a high concentration p+ region on a trench wall, or alternatively, by filling the trench with a p+ doped polysilicon or with a dielectric.

摘要翻译： 提供了具有降低故障或器件破坏的高电压驱动器IC的半导体器件。 高压IC芯片包括围绕不同电位的两个半导体区域中的每一个的沟槽结构。 具体地，第一半导体区域形成基于地电位的电路，并且围绕第二半导体区域的高电压结端接结构形成基于浮置电位的电路。 通过在沟槽壁上注入高浓度p +区域，或者通过用p +掺杂多晶硅或电介质填充沟槽，在挖掘沟槽之后形成沟槽结构。

公开(公告)号：US06531551B2

公开(公告)日：2003-03-11

申请号：US09214798

申请日：1999-01-11

申请人： Katsuhiko Ohno ,  Masami Kimura ,  Taketo Hirose ,  Yoshitaka Morimoto ,  Jun Saito

发明人： Katsuhiko Ohno ,  Masami Kimura ,  Taketo Hirose ,  Yoshitaka Morimoto ,  Jun Saito

IPC分类号： C08F1006

CPC分类号： C08L23/10 ,  C08L23/06 ,  C08L23/142 ,  C08L2314/02 ,  C08L2666/04

摘要： A polypropylene composition comprising 0.001 to 10 parts by weight of a polyethylene having an intrinsic viscosity [&eegr;E] of 0.01 to less than 15 dl/g s measured in tetralin at 135° C. and 100 parts by weight of a polyolefin comprising at least polypropylene, wherein the polyethylene is finely dispersed as particles with a number average particle diameter of, e.g., 1 to 5000 nm in the polyolefin comprising at least polypropylene. By virtue of the above constitution, the polypropylene composition has excellent transparency and rigidity, is free from the creation of a sweeper roll flow mark in the preparation of a film and substantially free from a neck-in phenomenon of a film, and has high productivity.

摘要翻译： 一种聚丙烯组合物，其包含0.001至10重量份在135℃下在四氢化萘中测量的特性粘度η为0.01至小于15dl / g的聚乙烯和100重量份至少包含聚丙烯的聚烯烃， 其中所述聚乙烯在至少包含聚丙烯的聚烯烃中作为具有数均粒径例如1至5000nm的颗粒细分散。 通过上述结构，聚丙烯组合物具有优异的透明性和刚性，在制备薄膜时基本上没有膜的颈部现象而产生清扫辊流动痕迹，并且具有高的生产率 。

公开(公告)号：US06441111B1

公开(公告)日：2002-08-27

申请号：US09485617

申请日：2000-02-14

申请人： Tsutomu Ushioda ,  Jun Saito ,  Mototake Tsutsui ,  Yoshitoyo Yasuda ,  Hiroyuki Fujita ,  Minoru Adachi

发明人： Tsutomu Ushioda ,  Jun Saito ,  Mototake Tsutsui ,  Yoshitoyo Yasuda ,  Hiroyuki Fujita ,  Minoru Adachi

IPC分类号： C08F1008

CPC分类号： C08F10/06 ,  C08F4/65912 ,  C08F4/65916 ,  C08F110/06 ,  Y10S526/943 ,  C08F2/001 ,  C08F4/65927 ,  C08F2500/05 ,  C08F2500/12

摘要： A polydisperse propylene polymer characterized by being produced by polymerizing a propylene monomer or a mixed monomer of propylene and other olefin(s) by a multistage polymerization wherein the polymerization conditions are stepwise changed in the presence of a supported metallocene catalyst having a transition metal compound and an aluminoxane or a reaction product thereof supported on a finely particulate support, and an organoaluminum compound as a scavenger, and by having a ratio of a weight-average molecular weight to a number-average molecular weight (Mw/Mn) of 4.0 or higher, a melting point (Tm) of 165° C. or lower and a difference between the melting point (Tm) and a heat distortion temperature (HDT) of 30° C. or less.

摘要翻译： 一种多分散丙烯聚合物，其特征在于通过多级聚合使丙烯单体或丙烯与其它烯烃的混合单体聚合而制备，其中聚合条件在具有过渡金属化合物的负载金属茂催化剂存在下逐步改变， 负载在细颗粒载体上的铝氧烷或其反应产物和作为清除剂的有机铝化合物，并且通过使重均分子量与数均分子量（Mw / Mn）之比为4.0以上 ，熔点（Tm）为165℃以下，熔点（Tm）与热变形温度（HDT）的差为30℃以下。

公开(公告)号：US06426395B1

公开(公告)日：2002-07-30

申请号：US09509742

申请日：2000-05-22

申请人： Hiroshi Yamazaki ,  Masato Nakano ,  Seiki Mitani ,  Jun Saito ,  Masato Harada ,  Mina Koyama

发明人： Hiroshi Yamazaki ,  Masato Nakano ,  Seiki Mitani ,  Jun Saito ,  Masato Harada ,  Mina Koyama

IPC分类号： C08F444

CPC分类号： B01J31/143 ,  B01J31/1608 ,  B01J31/2286 ,  B01J31/2295 ,  B01J2531/30 ,  B01J2531/40 ,  B01J2531/46 ,  B01J2531/48 ,  B01J2531/49 ,  B01J2531/50 ,  B01J2531/60 ,  C07F17/00 ,  C08F4/65912 ,  C08F10/00 ,  C08F110/06 ,  Y10S526/943 ,  C08F4/65927 ,  C08F2500/03 ,  C08F2500/17

摘要： Disclosed are &mgr;-oxo-bis-metallocene complex compounds, catalysts for the polymerization of olefins comprising a &mgr;-oxo-bis-metallocene complex compound and at lease one cocatalyst selected from the group consisting of an aluminoxane, an ionic compound, and a Lewis acid, and a process for the polymerization of olefins. An example of the &mgr;-oxo-bis-metallocene complex compound is represented by the following formula (1): wherein, for example, M is zirconium, n is 1, Y is silicon, X is chloro, and R1-R10 maybe hydrogen or alkyl.

摘要翻译： 公开了茂氧双 - 茂金属络合物，用于烯烃聚合的催化剂，其包含μ-氧 - 双茂金属络合物和至少一种助催化剂，所述助催化剂选自铝氧烷，离子化合物和路易斯 酸和烯烃聚合方法。 由下式（1）表示的是，由下式（1）表示：其中，例如，M为锆，n为1，Y为硅，X为氯，R1-R10为氢原子 或烷基。