公开(公告)号：US20200163260A1

公开(公告)日：2020-05-21

申请号：US16517066

申请日：2019-07-19

Applicant: KEMET Electronics Corporation

Inventor： Lonnie G. Jones ,  Iain D. Kinnon ,  John Bultitude ,  Nathan A. Reed ,  Jeffrey W. Bell ,  George Michael Theis

IPC: H05K9/00 ,  H01G2/14 ,  H01C1/14 ,  H01C7/12 ,  H01G4/005

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection device comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.