公开(公告)号：US11081882B2

公开(公告)日：2021-08-03

申请号：US16513349

申请日：2019-07-16

Applicant: KEMET Electronics Corporation

Inventor： John Bultitude ,  Lonnie G. Jones ,  Iain D. Kinnon ,  Nathan A. Reed ,  Jeffrey W. Bell

IPC: H02H9/04

Abstract: A protected electric circuit, and method of protecting a protected circuit is provided. The circuit comprises at least one sensitive device wherein the sensitive device operates at a device voltage and has a maximum voltage capability. At least one light emitting diode electrically connected with the sensitive device wherein the light emitting diode has a first trigger voltage wherein the first trigger voltage is above the device voltage and below the maximum voltage capability. When any said extraneous energy above the first trigger energy is experienced the light emitting diode emits photons thereby converting at least some of the extraneous energy to photon energy.

公开(公告)号：US20200219657A1

公开(公告)日：2020-07-09

申请号：US16825069

申请日：2020-03-20

Applicant: KEMET Electronics Corporation

Inventor： Iain D. Kinnon ,  John Bultitude ,  Lonnie G. Jones

IPC: H01G4/40 ,  H01T4/10

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection devices comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.

公开(公告)号：US20200161058A1

公开(公告)日：2020-05-21

申请号：US16195159

申请日：2018-11-19

Applicant: KEMET Electronics Corporation

Inventor： Iain D. Kinnon ,  John Bultitude ,  Lonnie G. Jones

IPC: H01G4/40 ,  H01T4/10

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection devices comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.

公开(公告)号：US20200028356A1

公开(公告)日：2020-01-23

申请号：US16513349

申请日：2019-07-16

Applicant: KEMET Electronics Corporation

Inventor： John Bultitude ,  Lonnie G. Jones ,  Iain D. Kinnon ,  Nathan A. Reed ,  Jeffrey W. Bell

IPC: H02H9/04

Abstract: A protected electric circuit, and method of protecting a protected circuit is provided. The circuit comprises at least one sensitive device wherein the sensitive device operates at a device voltage and has a maximum voltage capability. At least one light emitting diode electrically connected with the sensitive device wherein the light emitting diode has a first trigger voltage wherein the first trigger voltage is above the device voltage and below the maximum voltage capability. When any said extraneous energy above the first trigger energy is experienced the light emitting diode emits photons thereby converting at least some of the extraneous energy to photon energy.

公开(公告)号：US11178800B2

公开(公告)日：2021-11-16

申请号：US16517066

申请日：2019-07-19

Applicant: KEMET Electronics Corporation

Inventor： Lonnie G. Jones ,  Iain D. Kinnon ,  John Bultitude ,  Nathan A. Reed ,  Jeffrey W. Bell ,  George Michael Theis

IPC: H05K9/00 ,  H01G2/14 ,  H01G4/005 ,  H01C7/12 ,  H01C1/14

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection device comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.

公开(公告)号：US20200260618A1

公开(公告)日：2020-08-13

申请号：US16859261

申请日：2020-04-27

Applicant: KEMET Electronics Corporation

Inventor： Lonnie G. Jones ,  Iain D. Kinnon ,  John Bultitude ,  Nathan A. Reed ,  Jeffrey W. Bell ,  George Michael Theis

IPC: H05K9/00 ,  H01G4/005 ,  H01C7/12 ,  H01C1/14 ,  H01G2/14

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection device comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.

公开(公告)号：US20200163260A1

公开(公告)日：2020-05-21

申请号：US16517066

申请日：2019-07-19

Applicant: KEMET Electronics Corporation

Inventor： Lonnie G. Jones ,  Iain D. Kinnon ,  John Bultitude ,  Nathan A. Reed ,  Jeffrey W. Bell ,  George Michael Theis

IPC: H05K9/00 ,  H01G2/14 ,  H01C1/14 ,  H01C7/12 ,  H01G4/005

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection device comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.