公开(公告)号：US20230413554A1

公开(公告)日：2023-12-21

申请号：US18177055

申请日：2023-03-01

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Atsushi MURAKOSHI ,  Masaki NOGUCHI

IPC: H10B43/27 ,  H10B43/10

CPC classification number: H10B43/27 ,  H10B43/10

Abstract: According to one embodiment, a semiconductor device includes a stacked body of alternating conductor layers and insulator layers stacked in a first direction and a columnar body extending through the stacked body in the first direction. The columnar body includes a first insulating layer extending in the first direction and comprising aluminum and oxygen, a semiconductor layer between the first insulating layer and the conductor layers of the stacked body, a charge storage film between the semiconductor layer and the conductor layers, and a second insulating layer between the semiconductor layer and the first insulating layer and comprising silicon and oxygen. An interface between the semiconductor layer and the second insulating layer contains nitrogen to eliminate defects which may reduce channel mobility or the like.

公开(公告)号：US20220406809A1

公开(公告)日：2022-12-22

申请号：US17645138

申请日：2021-12-20

Applicant: Kioxia Corporation

Inventor： Akira TAKASHIMA ,  Tsunehiro INO

IPC: H01L27/11578 ,  H01L27/11551

Abstract: A semiconductor memory device according to an embodiment includes: a semiconductor layer extending in a first direction; a first gate electrode layer; a charge storage layer between the semiconductor layer and the first gate electrode layer, the charge storage layer containing a first element, a second element, and oxygen, the first element being at least one element selected from the group consisting of hafnium and zirconium, and the second element being at least one element selected from the group consisting of nitrogen and aluminum; a first insulating layer between the charge storage layer and the first gate electrode layer; and a second insulating layer between the semiconductor layer and the first gate electrode layer, the second insulating layer containing silicon and nitrogen, the second insulating layer surrounding the charge storage layer in a cross section that being parallel to the first direction and including the charge storage layer.